Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks

D. V. Lebedev; A. S. Vlasov; M. M. Kulagina; S. I. Troshkov; Yu A. Guseva; E. Pelucchi; A. Gocalinska; G. Juska; A. Yu Romanova; P. A. Buriak; V. I. Smirnov; A. V. Shelaev; V. A. Bykov; A. M. Mintairov

doi:10.1134/S1063782618140166

Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks

D. V. Lebedev
, A. S. Vlasov
, M. M. Kulagina
, S. I. Troshkov
, Yu A. Guseva
, E. Pelucchi
, A. Gocalinska
, G. Juska
, A. Yu Romanova
, P. A. Buriak
, V. I. Smirnov
, A. V. Shelaev
, V. A. Bykov
, A. M. Mintairov

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract: We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm^–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.

Original language	English
Pages (from-to)	1894-1897
Number of pages	4
Journal	Semiconductors
Volume	52
Issue number	14
DOIs	https://doi.org/10.1134/S1063782618140166
Publication status	Published - 1 Dec 2018

Access to Document

10.1134/S1063782618140166

https://hdl.handle.net/10468/7435Licence: CC BY-NC-ND

Cite this

@article{b6ea3d9d1dd44573a068226bc9e9c56e,

title = "Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks",

abstract = "Abstract: We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of \textasciitilde{}2 μm, free spectral range of \textasciitilde{}35 nm and quality factors Q \textasciitilde{} 4000 were formed by wet chemical etching. Low dot density (\textasciitilde{}2 μm–2) and large dot size (\textasciitilde{}150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.",

author = "Lebedev, \{D. V.\} and Vlasov, \{A. S.\} and Kulagina, \{M. M.\} and Troshkov, \{S. I.\} and Guseva, \{Yu A.\} and E. Pelucchi and A. Gocalinska and G. Juska and Romanova, \{A. Yu\} and Buriak, \{P. A.\} and Smirnov, \{V. I.\} and Shelaev, \{A. V.\} and Bykov, \{V. A.\} and Mintairov, \{A. M.\}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = dec,

day = "1",

doi = "10.1134/S1063782618140166",

language = "English",

volume = "52",

pages = "1894--1897",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "14",

}

TY - JOUR

T1 - Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks

AU - Lebedev, D. V.

AU - Vlasov, A. S.

AU - Kulagina, M. M.

AU - Troshkov, S. I.

AU - Guseva, Yu A.

AU - Pelucchi, E.

AU - Gocalinska, A.

AU - Juska, G.

AU - Romanova, A. Yu

AU - Buriak, P. A.

AU - Smirnov, V. I.

AU - Shelaev, A. V.

AU - Bykov, V. A.

AU - Mintairov, A. M.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Abstract: We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.

AB - Abstract: We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.

UR - https://www.scopus.com/pages/publications/85059487481

U2 - 10.1134/S1063782618140166

DO - 10.1134/S1063782618140166

M3 - Article

AN - SCOPUS:85059487481

SN - 1063-7826

VL - 52

SP - 1894

EP - 1897

JO - Semiconductors

JF - Semiconductors

IS - 14

ER -

Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks

Abstract

Access to Document

Other files and links

Fingerprint

Cite this