Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAIP band offset reduction layers

M. Ishikawa; Y. Nishikawa; S. Saito; M. Onomura; P. J. Parbrook; K. Nitta; J. Rennie; G. Hatakoshi

Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAIP band offset reduction layers

M. Ishikawa
, Y. Nishikawa
, S. Saito
, M. Onomura
, P. J. Parbrook
, K. Nitta
, J. Rennie
, G. Hatakoshi

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

Abstract

A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them.

Original language	English
Pages (from-to)	199-200
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
Publication status	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA Duration: 19 Sep 1994 → 23 Sep 1994

Cite this

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title = "Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAIP band offset reduction layers",

abstract = "A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them.",

author = "M. Ishikawa and Y. Nishikawa and S. Saito and M. Onomura and Parbrook, \{P. J.\} and K. Nitta and J. Rennie and G. Hatakoshi",

year = "1994",

language = "English",

pages = "199--200",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 14th International Semiconductor Laser Conference ; Conference date: 19-09-1994 Through 23-09-1994",

}

TY - JOUR

T1 - Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAIP band offset reduction layers

AU - Ishikawa, M.

AU - Nishikawa, Y.

AU - Saito, S.

AU - Onomura, M.

AU - Parbrook, P. J.

AU - Nitta, K.

AU - Rennie, J.

AU - Hatakoshi, G.

PY - 1994

Y1 - 1994

N2 - A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them.

AB - A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them.

UR - https://www.scopus.com/pages/publications/0028699252

M3 - Article

AN - SCOPUS:0028699252

SN - 0899-9406

SP - 199

EP - 200

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

T2 - Proceedings of the 1994 14th International Semiconductor Laser Conference

Y2 - 19 September 1994 through 23 September 1994

ER -

Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAIP band offset reduction layers

Abstract

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