Low-voltage micromechanical test structures for measurement of residual charge in dielectrics

Analysis of residual dielectric charge levels using micromechanical test structures is often difficult because the application of high bias voltages across thin dielectrics alters charge levels in the dielectric, thereby skewing measurement results. The use of low-voltage test structures to overcome this problem is demonstrated, and the technique is illustrated by evaluating residual charge levels in silicon oxide.