Low-Voltage Phase Shifters Based on Hf x Zr 1-x O 2 Ferroelectrics Integrated with Phased Antenna Arrays

  • M. Dragoman
  • , M. Aldrigo
  • , S. Iordanescu
  • , M. Modreanu
  • , I. Povey
  • , D. Vasilache
  • , A. Dinescu
  • , C. Romanitan

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

In this paper, we present the design, fabrication and microwave experimental characterisation of a ferroelectric phase shifter, which is integrated with a 2-element antenna array to achieve beam-steering capabilities at very low voltages of pm mathbf{1 V}. The phase shifter consists of an interdigitated metallic capacitor deposited on a Zr-doped ferroelectric hafnium dioxide (Hf x Zr 1-x O 2 ) thin film, directly grown on high-resistivity Silicon (HR Si). The phase shifter shows a maximum phase shift of 53.74° at 2.55 GHz, sweeping the DC voltage between -1 V and +1 V. The miniaturised phased array is in the form of two gold patch antennas, phase shifters and additional circuitry, all integrated on HfxZr 1-x O 2 /HR Si 4-inch wafer. The radiation beam at 2.55 GHz is steered with 25° when the 7-nm-thick ferroelectric is biased with pm mathbf{1 V}. These new microwave devices represent a step forward in the realisation of low-voltage tunable microwave components for the upcoming 5G technology.

Original languageEnglish
Title of host publication2018 48th European Microwave Conference, EuMC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages950-953
Number of pages4
ISBN (Electronic)9782874870514
DOIs
Publication statusPublished - 20 Nov 2018
Event48th European Microwave Conference, EuMC 2018 - Madrid, Spain
Duration: 25 Sep 201827 Sep 2018

Publication series

Name2018 48th European Microwave Conference, EuMC 2018

Conference

Conference48th European Microwave Conference, EuMC 2018
Country/TerritorySpain
CityMadrid
Period25/09/1827/09/18

Keywords

  • ferroelectric films
  • Phased arrays
  • thin film devices

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