LPCVD-silicon oxynitride films: Interface properties

E. Halova; S. Alexandrova; A. Szekeres; M. Modreanu

doi:10.1016/j.microrel.2004.11.011

LPCVD-silicon oxynitride films: Interface properties

E. Halova
, S. Alexandrova
, A. Szekeres
, M. Modreanu

Research output: Contribution to journal › Article › peer-review

Abstract

The interface properties of silicon oxynitride films prepared by low-pressure chemical vapor deposition at a temperature of 860 ° C have been investigated analyzing the capacitance-voltage and ac conductance-voltage characteristics of the metal-SiO_xN_y-silicon capacitors. Consistent results for the interface trap density have been obtained from single frequency ac conductance technique, approximation C-V method and from the interface density spectrum. The post-deposition annealing results in an improvement of the interface charge properties. The contribution of the interface traps to the estimation of the fixed oxide charge has been discussed which is important for the threshold voltage control in MOS devices.

Original language	English
Pages (from-to)	982-985
Number of pages	4
Journal	Microelectronics Reliability
Volume	45
Issue number	5-6
DOIs	https://doi.org/10.1016/j.microrel.2004.11.011
Publication status	Published - May 2005

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.microrel.2004.11.011

Cite this

@article{ea72c103382d4a32a8527f43f8fa6f4d,

title = "LPCVD-silicon oxynitride films: Interface properties",

abstract = "The interface properties of silicon oxynitride films prepared by low-pressure chemical vapor deposition at a temperature of 860 ° C have been investigated analyzing the capacitance-voltage and ac conductance-voltage characteristics of the metal-SiOxNy-silicon capacitors. Consistent results for the interface trap density have been obtained from single frequency ac conductance technique, approximation C-V method and from the interface density spectrum. The post-deposition annealing results in an improvement of the interface charge properties. The contribution of the interface traps to the estimation of the fixed oxide charge has been discussed which is important for the threshold voltage control in MOS devices.",

author = "E. Halova and S. Alexandrova and A. Szekeres and M. Modreanu",

year = "2005",

month = may,

doi = "10.1016/j.microrel.2004.11.011",

language = "English",

volume = "45",

pages = "982--985",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "5-6",

}

TY - JOUR

T1 - LPCVD-silicon oxynitride films

T2 - Interface properties

AU - Halova, E.

AU - Alexandrova, S.

AU - Szekeres, A.

AU - Modreanu, M.

PY - 2005/5

Y1 - 2005/5

N2 - The interface properties of silicon oxynitride films prepared by low-pressure chemical vapor deposition at a temperature of 860 ° C have been investigated analyzing the capacitance-voltage and ac conductance-voltage characteristics of the metal-SiOxNy-silicon capacitors. Consistent results for the interface trap density have been obtained from single frequency ac conductance technique, approximation C-V method and from the interface density spectrum. The post-deposition annealing results in an improvement of the interface charge properties. The contribution of the interface traps to the estimation of the fixed oxide charge has been discussed which is important for the threshold voltage control in MOS devices.

AB - The interface properties of silicon oxynitride films prepared by low-pressure chemical vapor deposition at a temperature of 860 ° C have been investigated analyzing the capacitance-voltage and ac conductance-voltage characteristics of the metal-SiOxNy-silicon capacitors. Consistent results for the interface trap density have been obtained from single frequency ac conductance technique, approximation C-V method and from the interface density spectrum. The post-deposition annealing results in an improvement of the interface charge properties. The contribution of the interface traps to the estimation of the fixed oxide charge has been discussed which is important for the threshold voltage control in MOS devices.

UR - https://www.scopus.com/pages/publications/14644426598

U2 - 10.1016/j.microrel.2004.11.011

DO - 10.1016/j.microrel.2004.11.011

M3 - Article

AN - SCOPUS:14644426598

SN - 0026-2714

VL - 45

SP - 982

EP - 985

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 5-6

ER -

LPCVD-silicon oxynitride films: Interface properties

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this