LPCVD-silicon oxynitride films: Low-temperature annealing effects

S. Alexandrova; A. Szekeres; E. Halova; M. Modreanu

doi:10.1016/S0042-207X(02)00363-9

LPCVD-silicon oxynitride films: Low-temperature annealing effects

S. Alexandrova
, A. Szekeres
, E. Halova
, M. Modreanu

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical properties of silicon oxynitride (SiO_xN_y) films on Si deposited by low-pressure chemical vapour deposition have been studied. The effect of annealing on SiO_xN_y films on the basis of frequency analysis of capacitance-voltage and conductance-voltage characteristics of metal-SiO_xN_y-silicon capacitors in the frequency range 1-300kHz was determined. The post-deposition annealing results in a decrease of the concentrations of the positive dielectric charge and defects in the silicon substrate. The nature of the dielectric charges is discussed.

Original language	English
Pages (from-to)	385-389
Number of pages	5
Journal	Vacuum
Volume	69
Issue number	1-3
DOIs	https://doi.org/10.1016/S0042-207X(02)00363-9
Publication status	Published - 24 Dec 2002
Externally published	Yes

Keywords

Annealing
Charged defect centres
Silicon oxynitride

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10.1016/S0042-207X(02)00363-9

Cite this

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title = "LPCVD-silicon oxynitride films: Low-temperature annealing effects",

abstract = "The electrical properties of silicon oxynitride (SiOxNy) films on Si deposited by low-pressure chemical vapour deposition have been studied. The effect of annealing on SiOxNy films on the basis of frequency analysis of capacitance-voltage and conductance-voltage characteristics of metal-SiOxNy-silicon capacitors in the frequency range 1-300kHz was determined. The post-deposition annealing results in a decrease of the concentrations of the positive dielectric charge and defects in the silicon substrate. The nature of the dielectric charges is discussed.",

keywords = "Annealing, Charged defect centres, Silicon oxynitride",

author = "S. Alexandrova and A. Szekeres and E. Halova and M. Modreanu",

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doi = "10.1016/S0042-207X(02)00363-9",

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TY - JOUR

T1 - LPCVD-silicon oxynitride films

T2 - Low-temperature annealing effects

AU - Alexandrova, S.

AU - Szekeres, A.

AU - Halova, E.

AU - Modreanu, M.

PY - 2002/12/24

Y1 - 2002/12/24

N2 - The electrical properties of silicon oxynitride (SiOxNy) films on Si deposited by low-pressure chemical vapour deposition have been studied. The effect of annealing on SiOxNy films on the basis of frequency analysis of capacitance-voltage and conductance-voltage characteristics of metal-SiOxNy-silicon capacitors in the frequency range 1-300kHz was determined. The post-deposition annealing results in a decrease of the concentrations of the positive dielectric charge and defects in the silicon substrate. The nature of the dielectric charges is discussed.

AB - The electrical properties of silicon oxynitride (SiOxNy) films on Si deposited by low-pressure chemical vapour deposition have been studied. The effect of annealing on SiOxNy films on the basis of frequency analysis of capacitance-voltage and conductance-voltage characteristics of metal-SiOxNy-silicon capacitors in the frequency range 1-300kHz was determined. The post-deposition annealing results in a decrease of the concentrations of the positive dielectric charge and defects in the silicon substrate. The nature of the dielectric charges is discussed.

KW - Annealing

KW - Charged defect centres

KW - Silicon oxynitride

UR - https://www.scopus.com/pages/publications/0037168568

U2 - 10.1016/S0042-207X(02)00363-9

DO - 10.1016/S0042-207X(02)00363-9

M3 - Article

AN - SCOPUS:0037168568

SN - 0042-207X

VL - 69

SP - 385

EP - 389

JO - Vacuum

JF - Vacuum

IS - 1-3

ER -

LPCVD-silicon oxynitride films: Low-temperature annealing effects

Abstract

Keywords

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