LPCVD silicon oxynitride from dichlorosilane, nitrous oxide and ammonia

M. Modreanu; P. Cosmin

LPCVD silicon oxynitride from dichlorosilane, nitrous oxide and ammonia

M. Modreanu
, P. Cosmin

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

Silicon oxynitride(SiO_xN_y) thin films were deposited on silicon substrates by low pressure chemical vapour deposition. Was analyzed the influence of the temperature and of the relative gas flow rate ratio (N₂O/NH₃) to the optical characteristics (using ellipsometry) and composition (using Bruggeman effective medium approximation) of the SiO_xN_y films. It has been demonstrated that SiO_xN_y films have good characteristics as uniformity, reproducibility and offer an excellent control of refractive index and can be used for optical waveguide application and membranes with mechanical controlled stress.

Original language	English
Pages	323-326
Number of pages	4
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 International Semiconductor Conference, CAS'95 - Sinaia, Romania Duration: 11 Oct 1995 → 14 Oct 1995

Conference

Conference	Proceedings of the 1995 International Semiconductor Conference, CAS'95
City	Sinaia, Romania
Period	11/10/95 → 14/10/95

Cite this

@conference{df8c60cf25144791ae0188232b17b74b,

title = "LPCVD silicon oxynitride from dichlorosilane, nitrous oxide and ammonia",

abstract = "Silicon oxynitride(SiOxNy) thin films were deposited on silicon substrates by low pressure chemical vapour deposition. Was analyzed the influence of the temperature and of the relative gas flow rate ratio (N2O/NH3) to the optical characteristics (using ellipsometry) and composition (using Bruggeman effective medium approximation) of the SiOxNy films. It has been demonstrated that SiOxNy films have good characteristics as uniformity, reproducibility and offer an excellent control of refractive index and can be used for optical waveguide application and membranes with mechanical controlled stress.",

author = "M. Modreanu and P. Cosmin",

year = "1995",

language = "English",

pages = "323--326",

note = "Proceedings of the 1995 International Semiconductor Conference, CAS'95 ; Conference date: 11-10-1995 Through 14-10-1995",

}

TY - CONF

T1 - LPCVD silicon oxynitride from dichlorosilane, nitrous oxide and ammonia

AU - Modreanu, M.

AU - Cosmin, P.

PY - 1995

Y1 - 1995

N2 - Silicon oxynitride(SiOxNy) thin films were deposited on silicon substrates by low pressure chemical vapour deposition. Was analyzed the influence of the temperature and of the relative gas flow rate ratio (N2O/NH3) to the optical characteristics (using ellipsometry) and composition (using Bruggeman effective medium approximation) of the SiOxNy films. It has been demonstrated that SiOxNy films have good characteristics as uniformity, reproducibility and offer an excellent control of refractive index and can be used for optical waveguide application and membranes with mechanical controlled stress.

AB - Silicon oxynitride(SiOxNy) thin films were deposited on silicon substrates by low pressure chemical vapour deposition. Was analyzed the influence of the temperature and of the relative gas flow rate ratio (N2O/NH3) to the optical characteristics (using ellipsometry) and composition (using Bruggeman effective medium approximation) of the SiOxNy films. It has been demonstrated that SiOxNy films have good characteristics as uniformity, reproducibility and offer an excellent control of refractive index and can be used for optical waveguide application and membranes with mechanical controlled stress.

UR - https://www.scopus.com/pages/publications/0029517852

M3 - Paper

AN - SCOPUS:0029517852

SP - 323

EP - 326

T2 - Proceedings of the 1995 International Semiconductor Conference, CAS'95

Y2 - 11 October 1995 through 14 October 1995

ER -

LPCVD silicon oxynitride from dichlorosilane, nitrous oxide and ammonia

Abstract

Conference

Other files and links

Fingerprint

Cite this