Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures

G. P. Yablonskii; V. N. Pavlovskii; E. V. Lutsenko; V. Z. Zubialevich; A. L. Gurskii; H. Kalisch; A. Szymakowski; R. H. Jansen; A. Alam; B. Schineller; M. Heuken

doi:10.1063/1.1830076

Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures

G. P. Yablonskii
, V. N. Pavlovskii
, E. V. Lutsenko
, V. Z. Zubialevich
, A. L. Gurskii
, H. Kalisch
, A. Szymakowski
, R. H. Jansen
, A. Alam
, B. Schineller
, M. Heuken

Research output: Contribution to journal › Article › peer-review

Abstract

It was found that the decrease of the InGaN/GaN multiple quantum well (MQW) growth temperature from 865 to 810 °C leads to a MQW emission wavelength shift from the violet to the green spectral region. The lowering of the growth temperature also promotes a decrease of the MQW photoluminescence (PL) intensity at high excitation and a disappearance of the excitonic features from the low-temperature reflection and PL spectra of GaN barriers and claddings. The laser threshold dependence on T_g is not monotonic, with the lowest value of 270 kW/cm² at T_g = 830 °C. High-temperature annealing (900 °C, 30 min) leads to a twofold increase of the PL efficiency only from the InGaN QWs grown at the lowest temperature. The results allow one to explain the laser threshold behavior in terms of the heterostructure quality, the defect concentration, In clusterization, and the piezoelectric field dependence on the MQW growth temperature.

Original language	English
Article number	3
Pages (from-to)	5158-5160
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	22
DOIs	https://doi.org/10.1063/1.1830076
Publication status	Published - 29 Nov 2004
Externally published	Yes

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Yablonskii, G. P., Pavlovskii, V. N., Lutsenko, E. V., Zubialevich, V. Z., Gurskii, A. L., Kalisch, H., Szymakowski, A., Jansen, R. H., Alam, A., Schineller, B., & Heuken, M. (2004). Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures. Applied Physics Letters, 85(22), 5158-5160. Article 3. https://doi.org/10.1063/1.1830076

@article{d6f92f60fd654178bf45b6d94555864d,

title = "Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures",

abstract = "It was found that the decrease of the InGaN/GaN multiple quantum well (MQW) growth temperature from 865 to 810 °C leads to a MQW emission wavelength shift from the violet to the green spectral region. The lowering of the growth temperature also promotes a decrease of the MQW photoluminescence (PL) intensity at high excitation and a disappearance of the excitonic features from the low-temperature reflection and PL spectra of GaN barriers and claddings. The laser threshold dependence on Tg is not monotonic, with the lowest value of 270 kW/cm2 at Tg = 830 °C. High-temperature annealing (900 °C, 30 min) leads to a twofold increase of the PL efficiency only from the InGaN QWs grown at the lowest temperature. The results allow one to explain the laser threshold behavior in terms of the heterostructure quality, the defect concentration, In clusterization, and the piezoelectric field dependence on the MQW growth temperature.",

author = "Yablonskii, \{G. P.\} and Pavlovskii, \{V. N.\} and Lutsenko, \{E. V.\} and Zubialevich, \{V. Z.\} and Gurskii, \{A. L.\} and H. Kalisch and A. Szymakowski and Jansen, \{R. H.\} and A. Alam and B. Schineller and M. Heuken",

year = "2004",

month = nov,

day = "29",

doi = "10.1063/1.1830076",

language = "English",

volume = "85",

pages = "5158--5160",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures

AU - Yablonskii, G. P.

AU - Pavlovskii, V. N.

AU - Lutsenko, E. V.

AU - Zubialevich, V. Z.

AU - Gurskii, A. L.

AU - Kalisch, H.

AU - Szymakowski, A.

AU - Jansen, R. H.

AU - Alam, A.

AU - Schineller, B.

AU - Heuken, M.

PY - 2004/11/29

Y1 - 2004/11/29

N2 - It was found that the decrease of the InGaN/GaN multiple quantum well (MQW) growth temperature from 865 to 810 °C leads to a MQW emission wavelength shift from the violet to the green spectral region. The lowering of the growth temperature also promotes a decrease of the MQW photoluminescence (PL) intensity at high excitation and a disappearance of the excitonic features from the low-temperature reflection and PL spectra of GaN barriers and claddings. The laser threshold dependence on Tg is not monotonic, with the lowest value of 270 kW/cm2 at Tg = 830 °C. High-temperature annealing (900 °C, 30 min) leads to a twofold increase of the PL efficiency only from the InGaN QWs grown at the lowest temperature. The results allow one to explain the laser threshold behavior in terms of the heterostructure quality, the defect concentration, In clusterization, and the piezoelectric field dependence on the MQW growth temperature.

AB - It was found that the decrease of the InGaN/GaN multiple quantum well (MQW) growth temperature from 865 to 810 °C leads to a MQW emission wavelength shift from the violet to the green spectral region. The lowering of the growth temperature also promotes a decrease of the MQW photoluminescence (PL) intensity at high excitation and a disappearance of the excitonic features from the low-temperature reflection and PL spectra of GaN barriers and claddings. The laser threshold dependence on Tg is not monotonic, with the lowest value of 270 kW/cm2 at Tg = 830 °C. High-temperature annealing (900 °C, 30 min) leads to a twofold increase of the PL efficiency only from the InGaN QWs grown at the lowest temperature. The results allow one to explain the laser threshold behavior in terms of the heterostructure quality, the defect concentration, In clusterization, and the piezoelectric field dependence on the MQW growth temperature.

UR - https://www.scopus.com/pages/publications/19944425816

U2 - 10.1063/1.1830076

DO - 10.1063/1.1830076

M3 - Article

AN - SCOPUS:19944425816

SN - 0003-6951

VL - 85

SP - 5158

EP - 5160

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 3

ER -

Luminescence and lasing in InGaN/GaN multiple quantum well heterostructures grown at different temperatures

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