Luminescence and stimulated emission from GaN on silicon substrates heterostructures

G. P. Yablonskii; E. V. Lutsenko; V. N. Pavlovskii; V. Z. Zubialevich; A. L. Gurskii; H. Kalisch; A. Szymakowskii; R. A. Jansen; A. Alam; Y. Dikme; B. Schineller; M. Heuken

doi:10.1002/1521-396X(200207)192:1<54::AID-PSSA54>3.0.CO;2-2

Luminescence and stimulated emission from GaN on silicon substrates heterostructures

G. P. Yablonskii
, E. V. Lutsenko
, V. N. Pavlovskii
, V. Z. Zubialevich
, A. L. Gurskii
, H. Kalisch
, A. Szymakowskii
, R. A. Jansen
, A. Alam
, Y. Dikme
, B. Schineller
, M. Heuken

Research output: Contribution to journal › Article › peer-review

Abstract

Photoluminescence (PL) and stimulated emission of GaN/Si layers grown by MOVPE with AlN and AlGaN buffers have been investigated. It has been found that thermal annealing of samples in nitrogen gas flow leads to an increase of the PL efficiency of up to 20 times, with a thermal activation energy of this process of 3.1-3.4 eV. The annealing promotes a significant decrease of the non-radiative center concentration and an increase of the number of shallow states. The laser action at λ = 377 nm under pulsed optical excitation was achieved at room temperature evidencing a high quality of the samples.

Original language	English
Pages (from-to)	54-59
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	192
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200207)192:1<54::AID-PSSA54>3.0.CO;2-2
Publication status	Published - Jul 2002
Externally published	Yes
Event	4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain Duration: 11 Mar 2002 → 15 Mar 2002

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10.1002/1521-396X(200207)192:1<54::AID-PSSA54>3.0.CO;2-2

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Yablonskii, G. P., Lutsenko, E. V., Pavlovskii, V. N., Zubialevich, V. Z., Gurskii, A. L., Kalisch, H., Szymakowskii, A., Jansen, R. A., Alam, A., Dikme, Y., Schineller, B., & Heuken, M. (2002). Luminescence and stimulated emission from GaN on silicon substrates heterostructures. Physica Status Solidi (A) Applied Research, 192(1), 54-59. https://doi.org/10.1002/1521-396X(200207)192:1<54::AID-PSSA54>3.0.CO;2-2

@article{7e5ea9d6e127423fb936149b91caf880,

title = "Luminescence and stimulated emission from GaN on silicon substrates heterostructures",

abstract = "Photoluminescence (PL) and stimulated emission of GaN/Si layers grown by MOVPE with AlN and AlGaN buffers have been investigated. It has been found that thermal annealing of samples in nitrogen gas flow leads to an increase of the PL efficiency of up to 20 times, with a thermal activation energy of this process of 3.1-3.4 eV. The annealing promotes a significant decrease of the non-radiative center concentration and an increase of the number of shallow states. The laser action at λ = 377 nm under pulsed optical excitation was achieved at room temperature evidencing a high quality of the samples.",

author = "Yablonskii, \{G. P.\} and Lutsenko, \{E. V.\} and Pavlovskii, \{V. N.\} and Zubialevich, \{V. Z.\} and Gurskii, \{A. L.\} and H. Kalisch and A. Szymakowskii and Jansen, \{R. A.\} and A. Alam and Y. Dikme and B. Schineller and M. Heuken",

year = "2002",

month = jul,

doi = "10.1002/1521-396X(200207)192:1<54::AID-PSSA54>3.0.CO;2-2",

language = "English",

volume = "192",

pages = "54--59",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) ; Conference date: 11-03-2002 Through 15-03-2002",

}

Yablonskii, GP, Lutsenko, EV, Pavlovskii, VN, Zubialevich, VZ, Gurskii, AL, Kalisch, H, Szymakowskii, A, Jansen, RA, Alam, A, Dikme, Y, Schineller, B & Heuken, M 2002, 'Luminescence and stimulated emission from GaN on silicon substrates heterostructures', Physica Status Solidi (A) Applied Research, vol. 192, no. 1, pp. 54-59. https://doi.org/10.1002/1521-396X(200207)192:1<54::AID-PSSA54>3.0.CO;2-2

TY - JOUR

T1 - Luminescence and stimulated emission from GaN on silicon substrates heterostructures

AU - Yablonskii, G. P.

AU - Lutsenko, E. V.

AU - Pavlovskii, V. N.

AU - Zubialevich, V. Z.

AU - Gurskii, A. L.

AU - Kalisch, H.

AU - Szymakowskii, A.

AU - Jansen, R. A.

AU - Alam, A.

AU - Dikme, Y.

AU - Schineller, B.

AU - Heuken, M.

PY - 2002/7

Y1 - 2002/7

N2 - Photoluminescence (PL) and stimulated emission of GaN/Si layers grown by MOVPE with AlN and AlGaN buffers have been investigated. It has been found that thermal annealing of samples in nitrogen gas flow leads to an increase of the PL efficiency of up to 20 times, with a thermal activation energy of this process of 3.1-3.4 eV. The annealing promotes a significant decrease of the non-radiative center concentration and an increase of the number of shallow states. The laser action at λ = 377 nm under pulsed optical excitation was achieved at room temperature evidencing a high quality of the samples.

AB - Photoluminescence (PL) and stimulated emission of GaN/Si layers grown by MOVPE with AlN and AlGaN buffers have been investigated. It has been found that thermal annealing of samples in nitrogen gas flow leads to an increase of the PL efficiency of up to 20 times, with a thermal activation energy of this process of 3.1-3.4 eV. The annealing promotes a significant decrease of the non-radiative center concentration and an increase of the number of shallow states. The laser action at λ = 377 nm under pulsed optical excitation was achieved at room temperature evidencing a high quality of the samples.

UR - https://www.scopus.com/pages/publications/0036650881

U2 - 10.1002/1521-396X(200207)192:1<54::AID-PSSA54>3.0.CO;2-2

DO - 10.1002/1521-396X(200207)192:1<54::AID-PSSA54>3.0.CO;2-2

M3 - Article

AN - SCOPUS:0036650881

SN - 0031-8965

VL - 192

SP - 54

EP - 59

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

T2 - 4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002)

Y2 - 11 March 2002 through 15 March 2002

ER -

Luminescence and stimulated emission from GaN on silicon substrates heterostructures

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