Luminescence properties of strained GaN epilayers and spatial configurations of silicon impurity and related defects
- A. L. Gurskii
- , E. V. Lutsenko
- , V. M. Zelenkovskii
- , T. V. Bezjazychnaja
- , V. N. Pavlovskii
- , V. Z. Zubialevich
- , B. Schineller
- , O. Schön
- , G. P. Yablonskii
- , M. Heuken
- Belarus Academy of Sciences
- Aixtron SE
Research output: Contribution to journal › Article › peer-review