Macro model for flash EEPROM cells

M. O'Shea; A. Concannon; K. G. McCarthy; B. Lane; A. Mathewson; M. Slotboom

doi:10.1109/ESSDERC.2000.194787

Macro model for flash EEPROM cells

M. O'Shea
, A. Concannon
, K. G. McCarthy
, B. Lane
, A. Mathewson
, M. Slotboom

School of Engineering and Architecture

Koninklijke Philips N.V.

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

An accurate, numerically efficient model for the transient and DC characteristics of Fowler Nordheim based flash EEPROM cells has been developed. This type of model will allow designers to efficiently and competently embed flash memory into their designs.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Editors	H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Publisher	IEEE Computer Society
Pages	352-355
Number of pages	4
ISBN (Electronic)	2863322486
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194787
Publication status	Published - 2000
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sep 2000 → 13 Sep 2000

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	30th European Solid-State Device Research Conference, ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	11/09/00 → 13/09/00

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10.1109/ESSDERC.2000.194787

Cite this

O'Shea, M., Concannon, A., McCarthy, K. G., Lane, B., Mathewson, A., & Slotboom, M. (2000). Macro model for flash EEPROM cells. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 352-355). Article 1503717 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2000.194787

@inproceedings{0b4922f47b97449fbaad843c63822a4a,

title = "Macro model for flash EEPROM cells",

abstract = "An accurate, numerically efficient model for the transient and DC characteristics of Fowler Nordheim based flash EEPROM cells has been developed. This type of model will allow designers to efficiently and competently embed flash memory into their designs.",

author = "M. O'Shea and A. Concannon and McCarthy, \{K. G.\} and B. Lane and A. Mathewson and M. Slotboom",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

year = "2000",

doi = "10.1109/ESSDERC.2000.194787",

language = "English",

isbn = "9782863322482",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "352--355",

editor = "H. Grunbacher and Crean, \{Gabriel M.\} and Lane, \{W. A.\} and McCabe, \{Frank A.\}",

booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",

address = "United States",

}

O'Shea, M, Concannon, A, McCarthy, KG, Lane, B, Mathewson, A & Slotboom, M 2000, Macro model for flash EEPROM cells. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503717, European Solid-State Device Research Conference, IEEE Computer Society, pp. 352-355, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194787

Macro model for flash EEPROM cells. / O'Shea, M.; Concannon, A.; McCarthy, K. G. et al.
ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE Computer Society, 2000. p. 352-355 1503717 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Macro model for flash EEPROM cells

AU - O'Shea, M.

AU - Concannon, A.

AU - McCarthy, K. G.

AU - Lane, B.

AU - Mathewson, A.

AU - Slotboom, M.

PY - 2000

Y1 - 2000

N2 - An accurate, numerically efficient model for the transient and DC characteristics of Fowler Nordheim based flash EEPROM cells has been developed. This type of model will allow designers to efficiently and competently embed flash memory into their designs.

AB - An accurate, numerically efficient model for the transient and DC characteristics of Fowler Nordheim based flash EEPROM cells has been developed. This type of model will allow designers to efficiently and competently embed flash memory into their designs.

UR - https://www.scopus.com/pages/publications/84907855621

U2 - 10.1109/ESSDERC.2000.194787

DO - 10.1109/ESSDERC.2000.194787

M3 - Conference proceeding

AN - SCOPUS:84907855621

SN - 9782863322482

T3 - European Solid-State Device Research Conference

SP - 352

EP - 355

BT - ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference

A2 - Grunbacher, H.

A2 - Crean, Gabriel M.

A2 - Lane, W. A.

A2 - McCabe, Frank A.

PB - IEEE Computer Society

T2 - 30th European Solid-State Device Research Conference, ESSDERC 2000

Y2 - 11 September 2000 through 13 September 2000

ER -

O'Shea M, Concannon A, McCarthy KG, Lane B, Mathewson A, Slotboom M. Macro model for flash EEPROM cells. In Grunbacher H, Crean GM, Lane WA, McCabe FA, editors, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society. 2000. p. 352-355. 1503717. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2000.194787

Macro model for flash EEPROM cells

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