@inproceedings{bc4029af2ff3482690fb7f50ddc9788b,
title = "Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications",
abstract = "This paper describes the application of Deep Level Transient Spectroscopy and Generation-Recombination Noise Spectroscopy to the study of trap levels in III-V and III-N materials and devices.",
author = "Eddy Simoen and Hsu, \{Po Chun Brent\} and Hao Yu and Hongyue Wang and Ming Zhao and Kenichiro Takakura and Vamsi Putcha and Uthayasankaran Peralagu and Bertrand Parvais and Niamh Waldron and Nadine Collaert",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 ; Conference date: 03-11-2020 Through 06-11-2020",
year = "2020",
month = nov,
day = "3",
doi = "10.1109/ICSICT49897.2020.9278262",
language = "English",
series = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Shaofeng Yu and Xiaona Zhu and Ting-Ao Tang",
booktitle = "2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings",
address = "United States",
}