Measurement of CVD thin films thickness by sample weighing method

M. Modreanu; P. Cosmin; S. Cosmin; C. Cobianu; C. Dunare

Measurement of CVD thin films thickness by sample weighing method

M. Modreanu
, P. Cosmin
, S. Cosmin
, C. Cobianu
, C. Dunare

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

A method is presented for measurements of Chemical Vapor Deposition (CVD) thin film thickness by using a sample weighing method. In the method, the support is weighed before and after deposition and the film thickness can be determined if density is known. The thin films were obtained in Atmospheric Pressure Chemical Vapor Deposition (APCVD) and Low Pressure Chemical Vapor Deposition (LPCVD) techniques. The studied CVD thin films were: silicon dioxide (SiO₂) and phosphosilicate glass (PSG) (in the P concentration 0-9 wt.%) obtained by the APCVD technique and polysilicon (amorphous and polycrystalline), silicon nitride (Si₃N₄) and silicon oxynitride obtained by the LPCVD technique.

Original language	English
Pages	409-412
Number of pages	4
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) - Sinaia, Rom Duration: 9 Oct 1996 → 12 Oct 1996

Conference

Conference	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)
City	Sinaia, Rom
Period	9/10/96 → 12/10/96

Cite this

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title = "Measurement of CVD thin films thickness by sample weighing method",

abstract = "A method is presented for measurements of Chemical Vapor Deposition (CVD) thin film thickness by using a sample weighing method. In the method, the support is weighed before and after deposition and the film thickness can be determined if density is known. The thin films were obtained in Atmospheric Pressure Chemical Vapor Deposition (APCVD) and Low Pressure Chemical Vapor Deposition (LPCVD) techniques. The studied CVD thin films were: silicon dioxide (SiO2) and phosphosilicate glass (PSG) (in the P concentration 0-9 wt.\%) obtained by the APCVD technique and polysilicon (amorphous and polycrystalline), silicon nitride (Si3N4) and silicon oxynitride obtained by the LPCVD technique.",

author = "M. Modreanu and P. Cosmin and S. Cosmin and C. Cobianu and C. Dunare",

year = "1996",

language = "English",

pages = "409--412",

note = "Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) ; Conference date: 09-10-1996 Through 12-10-1996",

}

TY - CONF

T1 - Measurement of CVD thin films thickness by sample weighing method

AU - Modreanu, M.

AU - Cosmin, P.

AU - Cosmin, S.

AU - Cobianu, C.

AU - Dunare, C.

PY - 1996

Y1 - 1996

N2 - A method is presented for measurements of Chemical Vapor Deposition (CVD) thin film thickness by using a sample weighing method. In the method, the support is weighed before and after deposition and the film thickness can be determined if density is known. The thin films were obtained in Atmospheric Pressure Chemical Vapor Deposition (APCVD) and Low Pressure Chemical Vapor Deposition (LPCVD) techniques. The studied CVD thin films were: silicon dioxide (SiO2) and phosphosilicate glass (PSG) (in the P concentration 0-9 wt.%) obtained by the APCVD technique and polysilicon (amorphous and polycrystalline), silicon nitride (Si3N4) and silicon oxynitride obtained by the LPCVD technique.

AB - A method is presented for measurements of Chemical Vapor Deposition (CVD) thin film thickness by using a sample weighing method. In the method, the support is weighed before and after deposition and the film thickness can be determined if density is known. The thin films were obtained in Atmospheric Pressure Chemical Vapor Deposition (APCVD) and Low Pressure Chemical Vapor Deposition (LPCVD) techniques. The studied CVD thin films were: silicon dioxide (SiO2) and phosphosilicate glass (PSG) (in the P concentration 0-9 wt.%) obtained by the APCVD technique and polysilicon (amorphous and polycrystalline), silicon nitride (Si3N4) and silicon oxynitride obtained by the LPCVD technique.

UR - https://www.scopus.com/pages/publications/0030411046

M3 - Paper

AN - SCOPUS:0030411046

SP - 409

EP - 412

T2 - Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)

Y2 - 9 October 1996 through 12 October 1996

ER -

Measurement of CVD thin films thickness by sample weighing method

Abstract

Conference

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