Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

J. Muszalski; J. Houlihan; G. Huyet; B. Corbett

doi:10.1049/el:20040270

Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

J. Muszalski
, J. Houlihan
, G. Huyet
, B. Corbett

Research output: Contribution to journal › Article › peer-review

Abstract

Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.

Original language	English
Pages (from-to)	428-430
Number of pages	3
Journal	Electronics Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1049/el:20040270
Publication status	Published - 1 Apr 2004

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title = "Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm",

abstract = "Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.",

author = "J. Muszalski and J. Houlihan and G. Huyet and B. Corbett",

year = "2004",

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doi = "10.1049/el:20040270",

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journal = "Electronics Letters",

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T1 - Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

AU - Muszalski, J.

AU - Houlihan, J.

AU - Huyet, G.

AU - Corbett, B.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.

AB - Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.

UR - https://www.scopus.com/pages/publications/2142841009

U2 - 10.1049/el:20040270

DO - 10.1049/el:20040270

M3 - Article

AN - SCOPUS:2142841009

SN - 0013-5194

VL - 40

SP - 428

EP - 430

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm

Abstract

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