Skip to main navigation Skip to search Skip to main content

Mechanisms of dislocation reduction in an Al0.98Ga 0.02N layer grown using a porous AlN buffer

  • University of Sheffield

Research output: Contribution to journalArticlepeer-review

Fingerprint

Dive into the research topics of 'Mechanisms of dislocation reduction in an Al0.98Ga 0.02N layer grown using a porous AlN buffer'. Together they form a unique fingerprint.
Sort by

Material Science