@inproceedings{041cbee03da644b18ee31155b2d1f974,
title = "Mechanisms of low frequency noise in P channel MOSFETs",
abstract = "In this paper we examine mechanisms of low frequency noise in p channel silicon MOSFETs. In particular the difference in the magnitude of the noise exhibited by p and n channel transistors is investigated in relation to the McWhorter theory, based on trapping and emission of inversion layer charge by states in the gate oxide. New results are presented for noise level dispersion as a function of device geometry for p channel transistors. Furthermore, the dependence of the drain current noise in saturation is examined for p and n channel devices.",
author = "Hurley, \{P. K.\} and S. Moran and L. Wall and A. Mathewson and B. Mason",
note = "Publisher Copyright: {\textcopyright} 1994 Editions Frontieres.; 24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",
year = "1994",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "147--150",
editor = "Peter Ashburn and Chris Hill",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
}