Mesoporous oxides as low dielectric constant materials

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Abstract

This paper describes the use of a modified sol-gel route in which a cationic structure directing agent (SDA) is added to the sol-gel mixture for the construction of an inter level dielectric material. Similar approaches are established routes for the production of non-silica periodic mesostructural powder samples. However, in this case, the strategy is employed with the aim of depositing a coherent aluminosilicate layer that has an ordered and uniform pore-structure on electronic substrates for use as a low k dielectric material. The pore structure is obtained by decomposing the SDA around which the oxide material is formed by the use of an ozone treatment.

Original languageEnglish
Pages (from-to)189-194
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3906
Publication statusPublished - 1999
EventProceedings of the 1999 International Symposium on Microelectronics - Chicago, IL, USA
Duration: 26 Oct 199928 Oct 1999

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