@inbook{2b99ea07e0404511b2f06e97026d6dbe,
title = "Metal contacts to p-type GaN by electroless deposition",
abstract = "Initial results are presented on the electroless deposition of metal contacts to p-type gallium nitride (GaN). Deposition procedures were developed for the deposition of both nickel and tungsten-cobalt (W-Co) contacts onto p-type GaN. Attempts to deposit platinum onp-type GaN failed, despite the fact that electroless platinum deposition was successfully achieved on other substrate types. Nickel contacts were overlaid with gold and annealed in oxygen ambient to form ohmic contacts with specific contact resistivity values down to 2×10-2 Ωcm2. Measurements at elevated temperatures up to 140°C showed that the specific contact resistivity was almost independent of temperature. The tungsten-cobalt contacts showed rectifying behaviour even after annealing at 650°C. This makes this contact type a possible candidate for Schottky contacts in high temperature applications.",
keywords = "Electroless deposition, Ohmic contact, p-type GaN",
author = "L. Lewis and D. Casey and Rohan, \{J. F.\} and Maaskant, \{P. P.\}",
year = "2007",
doi = "10.1117/12.758947",
language = "English",
isbn = "9780819469656",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Manufacturing LEDs for Lighting and Displays",
note = "Manufacturing LEDs for Lighting and Displays ; Conference date: 10-09-2007 Through 11-09-2007",
}