Metalorganic chemical vapour deposition of CuInSe2 from copper and indium diselenocarbamates for solar cell devices

John McAleese; Paul O'Brien; David J. Otway

Metalorganic chemical vapour deposition of CuInSe₂ from copper and indium diselenocarbamates for solar cell devices

John McAleese
, Paul O'Brien
, David J. Otway

Imperial College London

Research output: Contribution to journal › Article › peer-review

Abstract

Thin film(s) of chalcopyrite CuInSe₂ have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se₂CNMeⁿHexyl)₃ and precursors Cu(Se₂CNMeⁿHexyl)₂. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 - 450°C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Original language	English
Pages (from-to)	157-162
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	485
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 30 Nov 1997 → 4 Dec 1997

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Cite this

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title = "Metalorganic chemical vapour deposition of CuInSe2 from copper and indium diselenocarbamates for solar cell devices",

abstract = "Thin film(s) of chalcopyrite CuInSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 - 450°C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.",

author = "John McAleese and Paul O'Brien and Otway, \{David J.\}",

year = "1998",

language = "English",

volume = "485",

pages = "157--162",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Springer Nature",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 30-11-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Metalorganic chemical vapour deposition of CuInSe2 from copper and indium diselenocarbamates for solar cell devices

AU - McAleese, John

AU - O'Brien, Paul

AU - Otway, David J.

PY - 1998

Y1 - 1998

N2 - Thin film(s) of chalcopyrite CuInSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 - 450°C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

AB - Thin film(s) of chalcopyrite CuInSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 - 450°C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

UR - https://www.scopus.com/pages/publications/0031621079

M3 - Article

AN - SCOPUS:0031621079

SN - 0272-9172

VL - 485

SP - 157

EP - 162

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 30 November 1997 through 4 December 1997

ER -

Metalorganic chemical vapour deposition of CuInSe₂ from copper and indium diselenocarbamates for solar cell devices

Abstract

UN SDGs

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