Method for extracting doping concentration and flat-band voltage in junctionless multigate mosfets using 2-D electrostatic effects

In this letter, we propose a new method to extract the doping concentration and flat-band voltage in junctionless (JL) multigate nanowire (NW) mosfets. The method is based on using the gate-to-channel capacitance measurements of devices with different relatively small NW widths, for which 2-D electrostatic effects are appreciable, and plotting the average carrier concentration as a function of the gate voltage. The proposed method is verified using numerical simulations and experimental data for trigate JL transistors.