Methodology and Test Structures for Studying β-Ga2O3 Dielectric and Contact Interfaces

A. A. Gruszecki; J. Roy; K. S. Agrawal; P. La Torraca; K. Cherkaoui; P. K. Hurley; R. M. Wallace; C. D. Young

doi:10.1109/ICMTS63811.2025.11068900

Methodology and Test Structures for Studying β-Ga₂O₃ Dielectric and Contact Interfaces

A. A. Gruszecki
, J. Roy
, K. S. Agrawal
, P. La Torraca
, K. Cherkaoui
, P. K. Hurley
, R. M. Wallace
, C. D. Young

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

An outline of versatile device structures and test methodologies is provided to streamline the fabrication and characterization of β-Ga₂O₃ and other novel semiconductor materials for the purpose of investigating gate oxide and metal contact interfaces. β-Ga₂O₃/Al₂O₃ metal-oxide-semiconductor capacitors (MOSCAPs) and β-Ga₂O₃/Ti/Au transfer length method (TLM) structures are fabricated for preliminary investigation of dielectric trapping and contact properties as a function of processing. Multifrequency C-V measurements of MOSCAPs show negligible differences in charge trapping at or near the oxide interface following ultraviolet-ozone (UV-O₃) surface pretreatment. Additionally, I-V TLM characterization demonstrates improvements in ohmic contact properties after an O₂ plasma surface cleaning prior to metallization.

Original language	English
Title of host publication	2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS)
DOIs	https://doi.org/10.1109/ICMTS63811.2025.11068900
Publication status	Published - 2025
Event	37th IEEE International Conference on Microelectronic Test Structures, ICMTS 2025 - San Antonio, United States Duration: 24 Mar 2024 → 27 Mar 2024

Conference

Conference	37th IEEE International Conference on Microelectronic Test Structures, ICMTS 2025
Country/Territory	United States
City	San Antonio
Period	24/03/24 → 27/03/24

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10.1109/ICMTS63811.2025.11068900

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@inproceedings{d4d162fdb2e54bab85db5fe5edf265e1,

title = "Methodology and Test Structures for Studying β-Ga2O3 Dielectric and Contact Interfaces",

abstract = "An outline of versatile device structures and test methodologies is provided to streamline the fabrication and characterization of β-Ga2O3 and other novel semiconductor materials for the purpose of investigating gate oxide and metal contact interfaces. β-Ga2O3/Al2O3 metal-oxide-semiconductor capacitors (MOSCAPs) and β-Ga2O3/Ti/Au transfer length method (TLM) structures are fabricated for preliminary investigation of dielectric trapping and contact properties as a function of processing. Multifrequency C-V measurements of MOSCAPs show negligible differences in charge trapping at or near the oxide interface following ultraviolet-ozone (UV-O3) surface pretreatment. Additionally, I-V TLM characterization demonstrates improvements in ohmic contact properties after an O2 plasma surface cleaning prior to metallization.",

author = "Gruszecki, \{A. A.\} and J. Roy and Agrawal, \{K. S.\} and \{La Torraca\}, P. and K. Cherkaoui and Hurley, \{P. K.\} and Wallace, \{R. M.\} and Young, \{C. D.\}",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 37th IEEE International Conference on Microelectronic Test Structures, ICMTS 2025 ; Conference date: 24-03-2024 Through 27-03-2024",

year = "2025",

doi = "10.1109/ICMTS63811.2025.11068900",

language = "English",

isbn = "979-8-3315-3169-0",

booktitle = "2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS)",

}

Gruszecki, AA, Roy, J, Agrawal, KS, La Torraca, P , Cherkaoui, K , Hurley, PK, Wallace, RM & Young, CD 2025, Methodology and Test Structures for Studying β-Ga₂O₃ Dielectric and Contact Interfaces. in 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS). 37th IEEE International Conference on Microelectronic Test Structures, ICMTS 2025, San Antonio, United States, 24/03/24. https://doi.org/10.1109/ICMTS63811.2025.11068900

TY - GEN

T1 - Methodology and Test Structures for Studying β-Ga2O3 Dielectric and Contact Interfaces

AU - Gruszecki, A. A.

AU - Roy, J.

AU - Agrawal, K. S.

AU - La Torraca, P.

AU - Cherkaoui, K.

AU - Hurley, P. K.

AU - Wallace, R. M.

AU - Young, C. D.

PY - 2025

Y1 - 2025

N2 - An outline of versatile device structures and test methodologies is provided to streamline the fabrication and characterization of β-Ga2O3 and other novel semiconductor materials for the purpose of investigating gate oxide and metal contact interfaces. β-Ga2O3/Al2O3 metal-oxide-semiconductor capacitors (MOSCAPs) and β-Ga2O3/Ti/Au transfer length method (TLM) structures are fabricated for preliminary investigation of dielectric trapping and contact properties as a function of processing. Multifrequency C-V measurements of MOSCAPs show negligible differences in charge trapping at or near the oxide interface following ultraviolet-ozone (UV-O3) surface pretreatment. Additionally, I-V TLM characterization demonstrates improvements in ohmic contact properties after an O2 plasma surface cleaning prior to metallization.

AB - An outline of versatile device structures and test methodologies is provided to streamline the fabrication and characterization of β-Ga2O3 and other novel semiconductor materials for the purpose of investigating gate oxide and metal contact interfaces. β-Ga2O3/Al2O3 metal-oxide-semiconductor capacitors (MOSCAPs) and β-Ga2O3/Ti/Au transfer length method (TLM) structures are fabricated for preliminary investigation of dielectric trapping and contact properties as a function of processing. Multifrequency C-V measurements of MOSCAPs show negligible differences in charge trapping at or near the oxide interface following ultraviolet-ozone (UV-O3) surface pretreatment. Additionally, I-V TLM characterization demonstrates improvements in ohmic contact properties after an O2 plasma surface cleaning prior to metallization.

UR - https://www.scopus.com/pages/publications/105011029816

U2 - 10.1109/ICMTS63811.2025.11068900

DO - 10.1109/ICMTS63811.2025.11068900

M3 - Conference proceeding

AN - SCOPUS:105011029816

SN - 979-8-3315-3169-0

BT - 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS)

T2 - 37th IEEE International Conference on Microelectronic Test Structures, ICMTS 2025

Y2 - 24 March 2024 through 27 March 2024

ER -

Methodology and Test Structures for Studying β-Ga₂O₃ Dielectric and Contact Interfaces

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