Micro-Transfer printed InGaAs photodetector on SOI platform

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

Transfer-printed InGaAs photodetectors are integrated on SOI by evanescent, grating and edge coupling, exhibiting responsivities of 0.7, 0.38 and 0.15 A/W, with dark currents of 48,47 and 400 nA at 0.6 V reverse bias respectively.

Original languageEnglish
Title of host publication2023 IEEE Silicon Photonics Conference, SiPhotonics 2023
PublisherIEEE Computer Society
ISBN (Electronic)9781665486552
DOIs
Publication statusPublished - 2023
Event2023 IEEE Silicon Photonics Conference, SiPhotonics 2023 - Washington, United States
Duration: 4 Apr 20237 Apr 2023

Publication series

NameIEEE International Conference on Group IV Photonics GFP
Volume2023-April
ISSN (Print)1949-2081

Conference

Conference2023 IEEE Silicon Photonics Conference, SiPhotonics 2023
Country/TerritoryUnited States
CityWashington
Period4/04/237/04/23

Keywords

  • heterogeneous integration
  • In GaAs
  • Photodetector
  • Transfer printing

Fingerprint

Dive into the research topics of 'Micro-Transfer printed InGaAs photodetector on SOI platform'. Together they form a unique fingerprint.

Cite this