Micro-Transfer Printing of GaSb Optoelectronics Chips for Mid-Infrared Silicon Photonics Integrated Circuits

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Abstract

3D integration of GaSb-based gain chips on a silicon photonics platform using micro-transfer printing is demonstrated for the first time. The release process of GaSb coupons and their transfer for the demonstration of hybrid GaSb/Silicon-photonics on-chip external cavity lasers is reported. A methodology to evaluate the key features of the gain chip coupons, namely the quality of the etched facets and the facet coating deposited using a wafer-level process, is introduced. The characterization provides insight into the fabrication factors limiting the performance of the gain coupons. The level of performance achieved for the transfer printing process offers a solid landmark for the development of photonics integration technology operating at the 2–3 µm wavelength range. This is instrumental for the deployment of mid-infrared photonic integration technology in emerging applications related to gas and biomarker sensing.

Original languageEnglish
Article number2401791
JournalAdvanced Materials Technologies
Volume10
Issue number10
DOIs
Publication statusPublished - 22 May 2025

Keywords

  • GaSb
  • hybrid integration
  • mid-infrared
  • photonic integrated circuit
  • sensing
  • µ-transfer printing

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