Abstract
3D integration of GaSb-based gain chips on a silicon photonics platform using micro-transfer printing is demonstrated for the first time. The release process of GaSb coupons and their transfer for the demonstration of hybrid GaSb/Silicon-photonics on-chip external cavity lasers is reported. A methodology to evaluate the key features of the gain chip coupons, namely the quality of the etched facets and the facet coating deposited using a wafer-level process, is introduced. The characterization provides insight into the fabrication factors limiting the performance of the gain coupons. The level of performance achieved for the transfer printing process offers a solid landmark for the development of photonics integration technology operating at the 2–3 µm wavelength range. This is instrumental for the deployment of mid-infrared photonic integration technology in emerging applications related to gas and biomarker sensing.
| Original language | English |
|---|---|
| Article number | 2401791 |
| Journal | Advanced Materials Technologies |
| Volume | 10 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 22 May 2025 |
Keywords
- GaSb
- hybrid integration
- mid-infrared
- photonic integrated circuit
- sensing
- µ-transfer printing