Micro-transfer-printing of InP Photonic Devices to Silicon Photonics

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Abstract

Micro-transfer-printing (μTP) has been applied to the heterogeneous integration of InP devices to silicon photonics. The technology provides high-throughput parallel transfer of devices, the alignment is achieved through pattern recognition, the accuracy for single posts reaches < ±1.5 μm. A wet-etching technology based on FeCl3:H2O (1: 2) at controlled temperature and InGaAs or InAlAs sacrificial layers allows release InP coupons from the original substrate with selectivity to InP as high as S > 4200. A polymer anchor system has been engineered to restrain the devices to the original substrate during the undercut and to break neatly during the pick-up of the devices. Printing of InP devices has been shown on diverse photonic substrates with and without intermediate metal or adhesive layers. We review the application of μTP to the integration of InP etched facet lasers to the SOI The layout developed is suitable for edge coupling and shows a road map for hybrid polymer-SOI photonic circuits.

Original languageEnglish
Title of host publication2019 PhotonIcs and Electromagnetics Research Symposium - Spring, PIERS-Spring 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages242-248
Number of pages7
ISBN (Electronic)9781728134031
DOIs
Publication statusPublished - Jun 2019
Event2019 PhotonIcs and Electromagnetics Research Symposium - Spring, PIERS-Spring 2019 - Rome, Italy
Duration: 17 Jun 201920 Jun 2019

Publication series

NameProgress in Electromagnetics Research Symposium
Volume2019-June
ISSN (Print)1559-9450
ISSN (Electronic)1931-7360

Conference

Conference2019 PhotonIcs and Electromagnetics Research Symposium - Spring, PIERS-Spring 2019
Country/TerritoryItaly
CityRome
Period17/06/1920/06/19

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