Microcavity optoelectronic devices

L. A. Coldren; D. B. Young; M. G. Peters; F. H. Peters; J. W. Scott; C. C. Barron; B. J. Thibeault; S. W. Corzine

Microcavity optoelectronic devices

L. A. Coldren
, D. B. Young
, M. G. Peters
, F. H. Peters
, J. W. Scott
, C. C. Barron
, B. J. Thibeault
, S. W. Corzine

University of California at Santa Barbara

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Over the past few years vertical-cavity surface-emitting lasers and modulators have emerged as viable devices with interesting performance characteristics. One of their key features is that they occupy very little substrate area as compared to most optoelectronic devices. As a result, they also require relatively low drive powers. These aspects together with their suitability for wafer-scale fabrication and testing make them appear suitable for low-cost production as well as high performance. In this paper we shall review recent progress on these devices with emphasis on the vertical-cavity laser. Vertical-cavity lasers with cw powers exceeding 110 mW, overall efficiencies exceeding 17%, operating temperatures exceeding 120 °C, and output powers insensitive to temperature over ranges exceeding 60 °C will be illustrated. In addition, devices have operated cw down to diameters of 2 μm, including a 6 μm device that delivers nearly 2 milliwatts of single-mode output power with greater than 30 dB of spurious mode suppression. In the vertical-cavity modulator area, reflective asymmetric Fabry-Perot structures have given up to 37 GHz of modulation bandwidth. Insertion losses are about 3 dB, and required voltage swings for 100:1 modulation are approximately ±2 V.

Original language	English
Title of host publication	Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Editors	Anon
Publisher	Publ by IEEE
Pages	13-22
Number of pages	10
ISBN (Print)	0780308948
Publication status	Published - 1993
Externally published	Yes

Publication series

Name	Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Cite this

Coldren, L. A., Young, D. B., Peters, M. G., Peters, F. H., Scott, J. W., Barron, C. C., Thibeault, B. J., & Corzine, S. W. (1993). Microcavity optoelectronic devices. In Anon (Ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (pp. 13-22). (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits). Publ by IEEE.

@inproceedings{d227820e578e44aba1dc2bde09513b66,

title = "Microcavity optoelectronic devices",

abstract = "Over the past few years vertical-cavity surface-emitting lasers and modulators have emerged as viable devices with interesting performance characteristics. One of their key features is that they occupy very little substrate area as compared to most optoelectronic devices. As a result, they also require relatively low drive powers. These aspects together with their suitability for wafer-scale fabrication and testing make them appear suitable for low-cost production as well as high performance. In this paper we shall review recent progress on these devices with emphasis on the vertical-cavity laser. Vertical-cavity lasers with cw powers exceeding 110 mW, overall efficiencies exceeding 17\%, operating temperatures exceeding 120 °C, and output powers insensitive to temperature over ranges exceeding 60 °C will be illustrated. In addition, devices have operated cw down to diameters of 2 μm, including a 6 μm device that delivers nearly 2 milliwatts of single-mode output power with greater than 30 dB of spurious mode suppression. In the vertical-cavity modulator area, reflective asymmetric Fabry-Perot structures have given up to 37 GHz of modulation bandwidth. Insertion losses are about 3 dB, and required voltage swings for 100:1 modulation are approximately ±2 V.",

author = "Coldren, \{L. A.\} and Young, \{D. B.\} and Peters, \{M. G.\} and Peters, \{F. H.\} and Scott, \{J. W.\} and Barron, \{C. C.\} and Thibeault, \{B. J.\} and Corzine, \{S. W.\}",

year = "1993",

language = "English",

isbn = "0780308948",

series = "Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits",

publisher = "Publ by IEEE",

pages = "13--22",

editor = "Anon",

booktitle = "Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits",

}

Coldren, LA, Young, DB, Peters, MG, Peters, FH, Scott, JW, Barron, CC, Thibeault, BJ & Corzine, SW 1993, Microcavity optoelectronic devices. in Anon (ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Publ by IEEE, pp. 13-22.

Microcavity optoelectronic devices. / Coldren, L. A.; Young, D. B.; Peters, M. G. et al.
Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. ed. / Anon. Publ by IEEE, 1993. p. 13-22 (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Microcavity optoelectronic devices

AU - Coldren, L. A.

AU - Young, D. B.

AU - Peters, M. G.

AU - Peters, F. H.

AU - Scott, J. W.

AU - Barron, C. C.

AU - Thibeault, B. J.

AU - Corzine, S. W.

PY - 1993

Y1 - 1993

N2 - Over the past few years vertical-cavity surface-emitting lasers and modulators have emerged as viable devices with interesting performance characteristics. One of their key features is that they occupy very little substrate area as compared to most optoelectronic devices. As a result, they also require relatively low drive powers. These aspects together with their suitability for wafer-scale fabrication and testing make them appear suitable for low-cost production as well as high performance. In this paper we shall review recent progress on these devices with emphasis on the vertical-cavity laser. Vertical-cavity lasers with cw powers exceeding 110 mW, overall efficiencies exceeding 17%, operating temperatures exceeding 120 °C, and output powers insensitive to temperature over ranges exceeding 60 °C will be illustrated. In addition, devices have operated cw down to diameters of 2 μm, including a 6 μm device that delivers nearly 2 milliwatts of single-mode output power with greater than 30 dB of spurious mode suppression. In the vertical-cavity modulator area, reflective asymmetric Fabry-Perot structures have given up to 37 GHz of modulation bandwidth. Insertion losses are about 3 dB, and required voltage swings for 100:1 modulation are approximately ±2 V.

AB - Over the past few years vertical-cavity surface-emitting lasers and modulators have emerged as viable devices with interesting performance characteristics. One of their key features is that they occupy very little substrate area as compared to most optoelectronic devices. As a result, they also require relatively low drive powers. These aspects together with their suitability for wafer-scale fabrication and testing make them appear suitable for low-cost production as well as high performance. In this paper we shall review recent progress on these devices with emphasis on the vertical-cavity laser. Vertical-cavity lasers with cw powers exceeding 110 mW, overall efficiencies exceeding 17%, operating temperatures exceeding 120 °C, and output powers insensitive to temperature over ranges exceeding 60 °C will be illustrated. In addition, devices have operated cw down to diameters of 2 μm, including a 6 μm device that delivers nearly 2 milliwatts of single-mode output power with greater than 30 dB of spurious mode suppression. In the vertical-cavity modulator area, reflective asymmetric Fabry-Perot structures have given up to 37 GHz of modulation bandwidth. Insertion losses are about 3 dB, and required voltage swings for 100:1 modulation are approximately ±2 V.

UR - https://www.scopus.com/pages/publications/0027840236

M3 - Conference proceeding

AN - SCOPUS:0027840236

SN - 0780308948

T3 - Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

SP - 13

EP - 22

BT - Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

A2 - Anon, null

PB - Publ by IEEE

ER -

Coldren LA, Young DB, Peters MG, Peters FH, Scott JW, Barron CC et al. Microcavity optoelectronic devices. In Anon, editor, Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Publ by IEEE. 1993. p. 13-22. (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits).

Microcavity optoelectronic devices

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