Mid-infrared light-emitting diodes

  • A. Krier
  • , E. Repiso
  • , F. Al-Saymari
  • , P. J. Carrington
  • , A. R.J. Marshall
  • , L. Qi
  • , S. E. Krier
  • , K. J. Lulla
  • , M. Steer
  • , C. MacGregor
  • , C. A. Broderick
  • , R. Arkani
  • , E. O’Reilly
  • , M. Sorel
  • , S. I. Molina
  • , M. De La Mata

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

There are many applications for light-emitting diodes (LEDs) that can operate in the mid-infrared spectral range. However, the efficiency of these devices at room temperature is limited by competing nonradiative recombination mechanisms, inadequate carrier confinement, and insufficient optical extraction. Earlier devices based on bulk materials and heterojunctions have been quite successful to date, leading to some commercialization, but several new designs containing quantum structures for the active region have since been proposed and are being studied. Similarly, there is growing interest in using more cost-effective substrates requiring the development of metamorphic buffer layers as well as resonant cavity structures to increase optical extraction. An overview of the current status of mid-infrared LED technology is given here together with a brief summary of some recent developments.

Original languageEnglish
Title of host publicationMid-infrared Optoelectronics
Subtitle of host publicationMaterials, Devices, and Applications
PublisherElsevier
Pages59-90
Number of pages32
ISBN (Electronic)9780081027097
DOIs
Publication statusPublished - 1 Jan 2019

Keywords

  • Auger recombination
  • Light-emitting diode
  • Metamorphic buffer
  • Quantum well
  • Resonant cavity

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