@inbook{40c9ae17d4ac4d4d9f39a4297e029b2e,
title = "Mind the drain from strain: Effects of strain on the leakage current of Si diodes",
abstract = "We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in silicon. We observe that the strain can dramatically increase the leakage current, depending on the type of tunneling involved. We predict that 1\% compressive strain can increase the band-to-band tunneling and Shockley Read Hall leakage currents by over 5 and 3 times, respectively.",
author = "Felipe Murphy-Armando and Chang Liu and Yi Zhao and Ray Duffy",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 ; Conference date: 25-10-2016 Through 28-10-2016",
year = "2016",
doi = "10.1109/ICSICT.2016.7999046",
language = "English",
series = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "802--804",
editor = "Yu-Long Jiang and Ting-Ao Tang and Ru Huang",
booktitle = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
address = "United States",
}