TY - GEN
T1 - Mind the drain from strain
T2 - 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
AU - Murphy-Armando, Felipe
AU - Liu, Chang
AU - Zhao, Yi
AU - Duffy, Ray
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016
Y1 - 2016
N2 - We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in silicon. We observe that the strain can dramatically increase the leakage current, depending on the type of tunneling involved. We predict that 1% compressive strain can increase the band-to-band tunneling and Shockley Read Hall leakage currents by over 5 and 3 times, respectively.
AB - We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in silicon. We observe that the strain can dramatically increase the leakage current, depending on the type of tunneling involved. We predict that 1% compressive strain can increase the band-to-band tunneling and Shockley Read Hall leakage currents by over 5 and 3 times, respectively.
UR - https://www.scopus.com/pages/publications/85028682403
U2 - 10.1109/ICSICT.2016.7999046
DO - 10.1109/ICSICT.2016.7999046
M3 - Conference proceeding
AN - SCOPUS:85028682403
T3 - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
SP - 802
EP - 804
BT - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
A2 - Jiang, Yu-Long
A2 - Tang, Ting-Ao
A2 - Huang, Ru
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 25 October 2016 through 28 October 2016
ER -