Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

Jack Mulcahy; Shengtai Shi; Frank H. Peters; Xing Dai

doi:10.3390/photonics10080885

Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

Jack Mulcahy
, Shengtai Shi
, Frank H. Peters
, Xing Dai

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via (Formula presented.) characterisation using a vector network analyser (VNA). Optimisations of the contact scheme lead to the parasitic capacitance being reduced to <10 fF. EAMs using this contact scheme are fabricated and characterised using (Formula presented.) measurements. These (Formula presented.) measurements are used to simulate (Formula presented.) measurements, which predict a f_3dB bandwidth of near 80 GHz using an equivalent circuit model.

Original language	English
Article number	885
Journal	Photonics
Volume	10
Issue number	8
DOIs	https://doi.org/10.3390/photonics10080885
Publication status	Published - Aug 2023

Keywords

contact scheme
lumped-element electro-absorption modulators
parasitic capacitance
radio-frequency modulation

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10.3390/photonics10080885

Cite this

@article{5b0c83989db94b5393c486eb420f7c02,

title = "Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components",

abstract = "This paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via (Formula presented.) characterisation using a vector network analyser (VNA). Optimisations of the contact scheme lead to the parasitic capacitance being reduced to <10 fF. EAMs using this contact scheme are fabricated and characterised using (Formula presented.) measurements. These (Formula presented.) measurements are used to simulate (Formula presented.) measurements, which predict a f3dB bandwidth of near 80 GHz using an equivalent circuit model.",

keywords = "contact scheme, lumped-element electro-absorption modulators, parasitic capacitance, radio-frequency modulation",

author = "Jack Mulcahy and Shengtai Shi and Peters, \{Frank H.\} and Xing Dai",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = aug,

doi = "10.3390/photonics10080885",

language = "English",

volume = "10",

journal = "Photonics",

issn = "2304-6732",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "8",

}

TY - JOUR

T1 - Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

AU - Mulcahy, Jack

AU - Shi, Shengtai

AU - Peters, Frank H.

AU - Dai, Xing

PY - 2023/8

Y1 - 2023/8

N2 - This paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via (Formula presented.) characterisation using a vector network analyser (VNA). Optimisations of the contact scheme lead to the parasitic capacitance being reduced to <10 fF. EAMs using this contact scheme are fabricated and characterised using (Formula presented.) measurements. These (Formula presented.) measurements are used to simulate (Formula presented.) measurements, which predict a f3dB bandwidth of near 80 GHz using an equivalent circuit model.

AB - This paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via (Formula presented.) characterisation using a vector network analyser (VNA). Optimisations of the contact scheme lead to the parasitic capacitance being reduced to <10 fF. EAMs using this contact scheme are fabricated and characterised using (Formula presented.) measurements. These (Formula presented.) measurements are used to simulate (Formula presented.) measurements, which predict a f3dB bandwidth of near 80 GHz using an equivalent circuit model.

KW - contact scheme

KW - lumped-element electro-absorption modulators

KW - parasitic capacitance

KW - radio-frequency modulation

UR - https://www.scopus.com/pages/publications/85168862079

U2 - 10.3390/photonics10080885

DO - 10.3390/photonics10080885

M3 - Article

AN - SCOPUS:85168862079

SN - 2304-6732

VL - 10

JO - Photonics

JF - Photonics

IS - 8

M1 - 885

ER -

Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

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Study Results from Tyndall National Institute Update Understanding of Photonics (Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components)

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Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

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Study Results from Tyndall National Institute Update Understanding of Photonics (Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components)

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