MMIC GaAs X-Band Isolator with Enhanced Power Transmission Response

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

This paper discusses the RF design and characterization of an X-band MMIC isolator. It is based on a directional coupler and a non-reciprocal RF signal path that comprises a gain stage and two transmission line elements for phase control. In this manner, enhanced power transmission is obtained in the forward direction and isolation in the reverse one. The operating principles and RF design trade-offs (isolation, gain, matching) of the isolator are presented through circuit-based analysis. For proof-of-concept demonstration purposes, a prototype was designed at X-band and manufactured with a commercial MMIC GaAs process. Its RF measured performance is summarized as follows: center frequency: 9.4 GHz, maximum gain = 9.3 dB, maximum isolation = 27.7 dB, and 3 dB passband bandwidth with > 23 dB of isolation= 1.61 GHz.

Original languageEnglish
Title of host publication2021 IEEE 21st Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22-24
Number of pages3
ISBN (Electronic)9780738143644
DOIs
Publication statusPublished - 17 Jan 2021
Externally publishedYes
Event21st IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2021 - Virtual, San Diego, United States
Duration: 17 Jan 202122 Jan 2021

Publication series

Name2021 IEEE 21st Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2021

Conference

Conference21st IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2021
Country/TerritoryUnited States
CityVirtual, San Diego
Period17/01/2122/01/21

Keywords

  • Active isolator
  • gain stage
  • integrated circuit
  • MMIC isolator
  • non-reciprocity

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