Skip to main navigation Skip to search Skip to main content

MOCVD of CuInE2 (where E = S or Se) and related materials for solar cell devices

  • Imperial College London
  • University of Manchester

Research output: Contribution to journalArticlepeer-review

Abstract

Thin film(s) of chalcopyrite CuInE2 (where E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors [In(E2CNMenHexyl)3] and [Cu(E2CNMenHexyl)2]. Similarly, thin films of ME (where M = Zn, Cd; E = S, Se) have been deposited from precursors of general formula [M(E2CNMenHex)2]x. Films were grown on glass between 400 - 500°C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume606
Publication statusPublished - 2000
Externally publishedYes
EventChemical Processing of Dielectrics, Insulators and Electronic Ceramics - Boston, MA, USA
Duration: 29 Nov 19991 Dec 1999

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Fingerprint

Dive into the research topics of 'MOCVD of CuInE2 (where E = S or Se) and related materials for solar cell devices'. Together they form a unique fingerprint.

Cite this