Abstract
Thin film(s) of chalcopyrite CuInE2 (where E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors [In(E2CNMenHexyl)3] and [Cu(E2CNMenHexyl)2]. Similarly, thin films of ME (where M = Zn, Cd; E = S, Se) have been deposited from precursors of general formula [M(E2CNMenHex)2]x. Films were grown on glass between 400 - 500°C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.
| Original language | English |
|---|---|
| Pages (from-to) | 147-152 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 606 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | Chemical Processing of Dielectrics, Insulators and Electronic Ceramics - Boston, MA, USA Duration: 29 Nov 1999 → 1 Dec 1999 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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