MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor

Anthony C. Jones; Timothy J. Leedham; Peter J. Wright; Michael J. Crosbie; Penelope A. Lane; Dennis J. Williams; Kirsty A. Fleeting; David J. Otway; Paul O'Brien

MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor

Anthony C. Jones
, Timothy J. Leedham
, Peter J. Wright
, Michael J. Crosbie
, Penelope A. Lane
, Dennis J. Williams
, Kirsty A. Fleeting
, David J. Otway
, Paul O'Brien

Inorgtech Limited

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films of ZrO₂ are deposited by liquid injection metal-organic chemical vapor deposition using the novel zirconium precursors Zr(OPr)₂(thd)₂ and Zr(OBu)₂(thd)₂. It is shown that these precursors allow the optimized growth of ZrO₂ at significantly lower substrate temperatures than the conventional Zr(thd)₄ source. The ZrO₂ films grown from Zr(OPr)₂(thd)₂ are are found to be relatively pure (C approx. 2%), whereas those grown from Zr(OBu)₂(thd)₂ contains high levels of carbon impurity (approx. 13%).

Original language	English
Pages (from-to)	46-49
Number of pages	4
Journal	Advanced Materials
Volume	10
Issue number	4
Publication status	Published - 4 Mar 1998
Externally published	Yes

Cite this

@article{e5d979f2dba641bbb765bb404ed6b845,

title = "MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor",

abstract = "Thin films of ZrO2 are deposited by liquid injection metal-organic chemical vapor deposition using the novel zirconium precursors Zr(OPr)2(thd)2 and Zr(OBu)2(thd)2. It is shown that these precursors allow the optimized growth of ZrO2 at significantly lower substrate temperatures than the conventional Zr(thd)4 source. The ZrO2 films grown from Zr(OPr)2(thd)2 are are found to be relatively pure (C approx. 2\%), whereas those grown from Zr(OBu)2(thd)2 contains high levels of carbon impurity (approx. 13\%).",

author = "Jones, \{Anthony C.\} and Leedham, \{Timothy J.\} and Wright, \{Peter J.\} and Crosbie, \{Michael J.\} and Lane, \{Penelope A.\} and Williams, \{Dennis J.\} and Fleeting, \{Kirsty A.\} and Otway, \{David J.\} and Paul O'Brien",

year = "1998",

month = mar,

day = "4",

language = "English",

volume = "10",

pages = "46--49",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "4",

}

TY - JOUR

T1 - MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor

AU - Jones, Anthony C.

AU - Leedham, Timothy J.

AU - Wright, Peter J.

AU - Crosbie, Michael J.

AU - Lane, Penelope A.

AU - Williams, Dennis J.

AU - Fleeting, Kirsty A.

AU - Otway, David J.

AU - O'Brien, Paul

PY - 1998/3/4

Y1 - 1998/3/4

N2 - Thin films of ZrO2 are deposited by liquid injection metal-organic chemical vapor deposition using the novel zirconium precursors Zr(OPr)2(thd)2 and Zr(OBu)2(thd)2. It is shown that these precursors allow the optimized growth of ZrO2 at significantly lower substrate temperatures than the conventional Zr(thd)4 source. The ZrO2 films grown from Zr(OPr)2(thd)2 are are found to be relatively pure (C approx. 2%), whereas those grown from Zr(OBu)2(thd)2 contains high levels of carbon impurity (approx. 13%).

AB - Thin films of ZrO2 are deposited by liquid injection metal-organic chemical vapor deposition using the novel zirconium precursors Zr(OPr)2(thd)2 and Zr(OBu)2(thd)2. It is shown that these precursors allow the optimized growth of ZrO2 at significantly lower substrate temperatures than the conventional Zr(thd)4 source. The ZrO2 films grown from Zr(OPr)2(thd)2 are are found to be relatively pure (C approx. 2%), whereas those grown from Zr(OBu)2(thd)2 contains high levels of carbon impurity (approx. 13%).

UR - https://www.scopus.com/pages/publications/0032481550

M3 - Article

AN - SCOPUS:0032481550

SN - 0935-9648

VL - 10

SP - 46

EP - 49

JO - Advanced Materials

JF - Advanced Materials

IS - 4

ER -

MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor

Abstract

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