MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor

A. C. Jones; T. J. Leedham; P. J. Wright; M. J. Crosbie; P. A. Lane; D. J. Williams; K. A. Fleeting; D. J. Otway; P. O'Brien

doi:10.1002/(SICI)1521-3862(199803)04:02<46::AID-CVDE46>3.0.CO;2-1

MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor

A. C. Jones
, T. J. Leedham
, P. J. Wright
, M. J. Crosbie
, P. A. Lane
, D. J. Williams
, K. A. Fleeting
, D. J. Otway
, P. O'Brien

School of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films of zirconia and zirconates have a variety of important applications. MOCVD is an attractive technique for the preparation of these films, but there are a number of drawbacks associated with the currently used Zr precursors. This paper reports on a new class of precursor of the form [Zr(OR)₂(thd)₂], where R = ⁱPr or ^tBu, which allows growth by liquid injection of ZrO₂ under transport-controlled conditions at significantly lower temperatures than can be achieved with conventional sources.

Original language	English
Pages (from-to)	46-49
Number of pages	4
Journal	Chemical Vapor Deposition
Volume	4
Issue number	2
DOIs	https://doi.org/10.1002/(SICI)1521-3862(199803)04:02<46::AID-CVDE46>3.0.CO;2-1
Publication status	Published - 1998

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10.1002/(SICI)1521-3862(199803)04:02<46::AID-CVDE46>3.0.CO;2-1

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title = "MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor",

abstract = "Thin films of zirconia and zirconates have a variety of important applications. MOCVD is an attractive technique for the preparation of these films, but there are a number of drawbacks associated with the currently used Zr precursors. This paper reports on a new class of precursor of the form [Zr(OR)2(thd)2], where R = iPr or tBu, which allows growth by liquid injection of ZrO2 under transport-controlled conditions at significantly lower temperatures than can be achieved with conventional sources.",

author = "Jones, \{A. C.\} and Leedham, \{T. J.\} and Wright, \{P. J.\} and Crosbie, \{M. J.\} and Lane, \{P. A.\} and Williams, \{D. J.\} and Fleeting, \{K. A.\} and Otway, \{D. J.\} and P. O'Brien",

year = "1998",

doi = "10.1002/(SICI)1521-3862(199803)04:02<46::AID-CVDE46>3.0.CO;2-1",

language = "English",

volume = "4",

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journal = "Chemical Vapor Deposition",

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TY - JOUR

T1 - MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor

AU - Jones, A. C.

AU - Leedham, T. J.

AU - Wright, P. J.

AU - Crosbie, M. J.

AU - Lane, P. A.

AU - Williams, D. J.

AU - Fleeting, K. A.

AU - Otway, D. J.

AU - O'Brien, P.

PY - 1998

Y1 - 1998

N2 - Thin films of zirconia and zirconates have a variety of important applications. MOCVD is an attractive technique for the preparation of these films, but there are a number of drawbacks associated with the currently used Zr precursors. This paper reports on a new class of precursor of the form [Zr(OR)2(thd)2], where R = iPr or tBu, which allows growth by liquid injection of ZrO2 under transport-controlled conditions at significantly lower temperatures than can be achieved with conventional sources.

AB - Thin films of zirconia and zirconates have a variety of important applications. MOCVD is an attractive technique for the preparation of these films, but there are a number of drawbacks associated with the currently used Zr precursors. This paper reports on a new class of precursor of the form [Zr(OR)2(thd)2], where R = iPr or tBu, which allows growth by liquid injection of ZrO2 under transport-controlled conditions at significantly lower temperatures than can be achieved with conventional sources.

UR - https://www.scopus.com/pages/publications/0032027493

U2 - 10.1002/(SICI)1521-3862(199803)04:02<46::AID-CVDE46>3.0.CO;2-1

DO - 10.1002/(SICI)1521-3862(199803)04:02<46::AID-CVDE46>3.0.CO;2-1

M3 - Article

AN - SCOPUS:0032027493

SN - 0948-1907

VL - 4

SP - 46

EP - 49

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 2

ER -

MOCVD of zirconia thin films by direct liquid injection using a new class of zirconium precursor

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