Modeling and numerical analysis of temperature variations along the cavity and in the heat sink of a single quantum well high power laser diode

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

In this paper, thermal behavior of GaAs/AlGaAs single quantum well (SQW) high power laser diode (HPLD) is modeled by means of finite difference method (FDM). A numerical model is introduced that calculates the time dependant axial variations of photon density, carrier density and temperature in the semiconductor laser, self-consistently. The dynamic response of the high power laser's back facet temperature and the influence of the surface recombination velocity on the temperature of both facets are modeled numerically. The two-dimensional temperature distribution in the Cupper heat sink is also demonstrated. In order to gain precise results we use the Fermi's Golden Rule to calculate the exact temperature-dependent gain function of the quantum well laser.

Original languageEnglish
Title of host publication2008 International Conference on Laser and Fiber-Optical Networks Modeling, LNM 2008
Pages26-28
Number of pages3
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008 - Alushta, Crimea, Ukraine
Duration: 2 Oct 20084 Oct 2008

Publication series

Name2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008

Conference

Conference2008 International Conference on Laser and Fiber-Optical Networks Modeling, LFNM 2008
Country/TerritoryUkraine
CityAlushta, Crimea
Period2/10/084/10/08

Keywords

  • Finite difference method
  • Heat sink
  • High power quantum well laser
  • Surface recombination velocity

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