@inbook{56c3b4d2c4c4487fa5dd831764b575d8,
title = "Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics",
abstract = "We present a multiscale device simulation framework for modeling degradation and breakdown (BD) of gate dielectric stacks. It relies on an accurate, material-dependent description of the most relevant defect-related phenomena in dielectrics (charge trapping and transport, atomic species generation), and self-consistently models all degradation phases within the same physics-based description: stress-induced leakage current (SILC), soft (SBD), progressive (PBD) and hard breakdown (HBD). This methodology is applied to understand several key aspects related to the reliability of SiO2 and high-k (HK) gate dielectrics: i) characterization and role of defects responsible for the charge transport in fresh and stressed devices (SILC); ii) the differences observed in the SILC behavior of nMOS and pMOS transistors; iii) the degradation of bilayer SiOx/HfO2 stacks; and iv) the voltage dependence of the time-dependent dielectric breakdown (TDDB) distribution.",
keywords = "dielectric breakdown, Dielectric degradation, Ginestra{\textregistered}, stress-induced leakage currents (SILC), TDDB",
author = "Andrea Padovani and Torraca, \{Paolo La\} and Luca Larcher and Jack Strand and Alexander Shluger",
note = "Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics.; 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 ; Conference date: 27-09-2023 Through 29-09-2023",
year = "2023",
doi = "10.23919/SISPAD57422.2023.10319608",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "93--96",
booktitle = "2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023",
address = "United States",
}