@inbook{f93cc1b7762c47a59ab0cca7f1fc165e,
title = "Modeling dopant diffusion in strained and strain-relaxed epi-SiGe",
abstract = "Ultra-shallow arsenic and boron diffusion in both strained and strain-relaxed SiGe has been investigated in this paper. Significant arsenic diffusion enhancement and boron diffusion retardation have been observed. Strained SiGe was found to have a stronger arsenic diffusion enhancement. Empirical equations in Arrhenius form have been created and incorporated into numerical simulation to successfully model the diffusion dopant profiles.",
author = "Sheu, \{Yi Ming\} and Huang, \{Tsung Yi\} and Hu, \{Yu Ping\} and Wang, \{Chih Chiang\} and Sally Liu and Ray Duffy and Anco Heringa and Fred Roozeboom and Cowern, \{Nick E.B.\} and Griffin, \{Peter B.\}",
year = "2005",
language = "English",
isbn = "4990276205",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
pages = "75--78",
booktitle = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005",
note = "2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 ; Conference date: 01-09-2005 Through 03-09-2005",
}