Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

M. Zhao; A. Karim; G. V. Hansson; W. X. Ni; P. Townsend; S. A. Lynch; D. J. Paul

doi:10.1016/j.tsf.2008.08.091

Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

M. Zhao
, A. Karim
, G. V. Hansson
, W. X. Ni
, P. Townsend
, S. A. Lynch
, D. J. Paul

Research output: Contribution to journal › Article › peer-review

Abstract

A Si/SiGe bound-to-continuum quantum cascade design for THz emission was grown using solid-source molecular beam epitaxy on Si_0.8Ge_0.2 virtual substrates. The growth parameters were carefully studied and several samples with different boron doping concentrations were grown at optimized conditions. Extensive material characterizations revealed a high crystalline quality of the grown structures with an excellent growth control. Layer undulations resulting from a nonuniform strain field, introduced by high doping concentration, were observed. The device characterizations suggested that a modification on the design was needed in order to enhance the THz emission.

Original language	English
Pages (from-to)	34-37
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.091
Publication status	Published - 3 Nov 2008
Externally published	Yes

Keywords

Molecular beam epitaxy (MBE)
Quantum cascade
Si/SiGe
Transmission electron microscopy (TEM)
X-ray diffraction

Access to Document

10.1016/j.tsf.2008.08.091

Cite this

@article{4a7ac34706a740e893752a43de5ef127,

title = "Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission",

abstract = "A Si/SiGe bound-to-continuum quantum cascade design for THz emission was grown using solid-source molecular beam epitaxy on Si0.8Ge0.2 virtual substrates. The growth parameters were carefully studied and several samples with different boron doping concentrations were grown at optimized conditions. Extensive material characterizations revealed a high crystalline quality of the grown structures with an excellent growth control. Layer undulations resulting from a nonuniform strain field, introduced by high doping concentration, were observed. The device characterizations suggested that a modification on the design was needed in order to enhance the THz emission.",

keywords = "Molecular beam epitaxy (MBE), Quantum cascade, Si/SiGe, Transmission electron microscopy (TEM), X-ray diffraction",

author = "M. Zhao and A. Karim and Hansson, \{G. V.\} and Ni, \{W. X.\} and P. Townsend and Lynch, \{S. A.\} and Paul, \{D. J.\}",

year = "2008",

month = nov,

day = "3",

doi = "10.1016/j.tsf.2008.08.091",

language = "English",

volume = "517",

pages = "34--37",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

AU - Zhao, M.

AU - Karim, A.

AU - Hansson, G. V.

AU - Ni, W. X.

AU - Townsend, P.

AU - Lynch, S. A.

AU - Paul, D. J.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - A Si/SiGe bound-to-continuum quantum cascade design for THz emission was grown using solid-source molecular beam epitaxy on Si0.8Ge0.2 virtual substrates. The growth parameters were carefully studied and several samples with different boron doping concentrations were grown at optimized conditions. Extensive material characterizations revealed a high crystalline quality of the grown structures with an excellent growth control. Layer undulations resulting from a nonuniform strain field, introduced by high doping concentration, were observed. The device characterizations suggested that a modification on the design was needed in order to enhance the THz emission.

AB - A Si/SiGe bound-to-continuum quantum cascade design for THz emission was grown using solid-source molecular beam epitaxy on Si0.8Ge0.2 virtual substrates. The growth parameters were carefully studied and several samples with different boron doping concentrations were grown at optimized conditions. Extensive material characterizations revealed a high crystalline quality of the grown structures with an excellent growth control. Layer undulations resulting from a nonuniform strain field, introduced by high doping concentration, were observed. The device characterizations suggested that a modification on the design was needed in order to enhance the THz emission.

KW - Molecular beam epitaxy (MBE)

KW - Quantum cascade

KW - Si/SiGe

KW - Transmission electron microscopy (TEM)

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/54849420271

U2 - 10.1016/j.tsf.2008.08.091

DO - 10.1016/j.tsf.2008.08.091

M3 - Article

AN - SCOPUS:54849420271

SN - 0040-6090

VL - 517

SP - 34

EP - 37

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this