TY - GEN
T1 - Monolithic integration of GaSb diode lasers on a silicon photonic circuit
AU - Remis, Andres
AU - Paparella, Michele
AU - Bartolomé, Laura Monge
AU - Gilbert, Audrey
AU - Boissier, Guilhem
AU - Grande, Marco
AU - Blake, Alan
AU - O'Faolain, Liam
AU - Cerutti, Laurent
AU - Rodriguez, Jean Baptiste
AU - Tournié, Eric
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Silicon (Si) photonics is one of the most promising technologies in many application fields thanks to the mature Si industry, the large Si wafer size and the optical properties of Si and related materials. One of the biggest challenges is the integration of high-performance light sources on Si and much work has recently been devoted to the integration of III-V semiconductor lasers [1]. Their monolithic integration, i.e. direct integration via epitaxy, would open the way to low-cost, large-scale and ultra-dense Si photonic chips [2]. However, only discrete III-V-on-Si lasers have been reported so far [3]. In this work, we demonstrate the monolithic integration of mid-infrared GaSb diode lasers (DLs) on a Si photonic integrated circuit (PIC) equipped with SiN waveguides (WGs) and we demonstrate light coupling into the WGs.
AB - Silicon (Si) photonics is one of the most promising technologies in many application fields thanks to the mature Si industry, the large Si wafer size and the optical properties of Si and related materials. One of the biggest challenges is the integration of high-performance light sources on Si and much work has recently been devoted to the integration of III-V semiconductor lasers [1]. Their monolithic integration, i.e. direct integration via epitaxy, would open the way to low-cost, large-scale and ultra-dense Si photonic chips [2]. However, only discrete III-V-on-Si lasers have been reported so far [3]. In this work, we demonstrate the monolithic integration of mid-infrared GaSb diode lasers (DLs) on a Si photonic integrated circuit (PIC) equipped with SiN waveguides (WGs) and we demonstrate light coupling into the WGs.
UR - https://www.scopus.com/pages/publications/85175699877
U2 - 10.1109/CLEO/EUROPE-EQEC57999.2023.10231760
DO - 10.1109/CLEO/EUROPE-EQEC57999.2023.10231760
M3 - Conference proceeding
AN - SCOPUS:85175699877
T3 - 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023
BT - 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2023
Y2 - 26 June 2023 through 30 June 2023
ER -