@inbook{ace3dd3819764b799bfc85ffa9f2a03c,
title = "Monolithic integration of III-V semiconductors by selective area growth on Si(001) substrate: Epitaxy challenges \& applications",
abstract = "This study relates to the selective area growth (SAG) of III-V semiconductors on Silicon substrates. Both approaches, growth in trenches and NWs bottom-up growth, are considered and discussed. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width below 20 nm. First GaAs NWs from production MOVPE tool are also shown in a second part. Finally we conclude with the different applications using III-V semiconductors successfully integrated on Silicon substrates.",
author = "C. Merckling and S. Jiang and Z. Liu and N. Waldron and G. Boccardi and R. Rooyackers and Z. Wang and B. Tian and M. Pantouvaki and N. Collaert and \{Van Campenhout\}, J. and M. Heyns and \{Van Thourhout\}, D. and W. Vandervorst and A. Thean",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
year = "2015",
doi = "10.1149/06604.0107ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "107--116",
editor = "Gusev, \{E. P.\} and Timans, \{P. J.\} and F. Roozeboom and S. DeGendt and K. Kakushima and V. Narayanan and Z. Karim",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5",
address = "United States",
edition = "4",
}