Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment

T. Kugathasan; R. Bates; C. Buttar; I. Berdalovic; B. Blochet; R. Cardella; M. Dalla; N. Egidos Plaja; T. Hemperek; J. W. Van Hoorne; D. Maneuski; C. A. Marin Tobon; K. Moustakas; H. Mugnier; L. Musa; H. Pernegger; P. Riedler; C. Riegel; J. Rousset; C. Sbarra; D. Schaefer; E. J. Schioppa; A. Sharma; W. Snoeys; C. Solans Sanchez; T. Wang; N. Wermes

Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment

T. Kugathasan
, R. Bates
, C. Buttar
, I. Berdalovic
, B. Blochet
, R. Cardella
, M. Dalla
, N. Egidos Plaja
, T. Hemperek
, J. W. Van Hoorne
, D. Maneuski
, C. A. Marin Tobon
, K. Moustakas
, H. Mugnier
, L. Musa
, H. Pernegger
, P. Riedler
, C. Riegel
, J. Rousset
, C. Sbarra

D. Schaefer, E. J. Schioppa, A. Sharma, W. Snoeys, C. Solans Sanchez, T. Wang, N. Wermes

CERN
University of Glasgow
University of Bologna
University of Bonn
University of Wuppertal
University of Oxford

Research output: Contribution to journal › Article › peer-review

Abstract

The ATLAS experiment at CERN plans to upgrade its Inner Tracking System for the High-Luminosity LHC in 2026. After the ALPIDE monolithic sensor for the ALICE ITS was successfully implemented in a 180 nm CMOS Imaging Sensor technology, the process was modified to combine full sensor depletion with a low sensor capacitance (≈ 2.5fF), for increased radiation tolerance and low analog power consumption. Efficiency and charge collection time were measured with comparisons before and after irradiation. This paper summarises the measurements and the ATLAS-specific development towards full-reticle size CMOS sensors and modules in this modified technology.

Original language	English
Journal	Proceedings of Science
Volume	2017-September
Publication status	Published - 2017
Externally published	Yes
Event	2017 Topical Workshop on Electronics for Particle Physics, TWEPP 2017 - Santa Cruz, United States Duration: 11 Sep 2017 → 14 Sep 2017

Cite this

Kugathasan, T., Bates, R., Buttar, C., Berdalovic, I., Blochet, B., Cardella, R., Dalla, M., Egidos Plaja, N., Hemperek, T., Van Hoorne, J. W., Maneuski, D., Marin Tobon, C. A., Moustakas, K., Mugnier, H., Musa, L., Pernegger, H., Riedler, P., Riegel, C., Rousset, J., ... Wermes, N. (2017). Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment. Proceedings of Science, 2017-September.

@article{433b718fac8f42aba5c23af235b4b868,

title = "Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment",

abstract = "The ATLAS experiment at CERN plans to upgrade its Inner Tracking System for the High-Luminosity LHC in 2026. After the ALPIDE monolithic sensor for the ALICE ITS was successfully implemented in a 180 nm CMOS Imaging Sensor technology, the process was modified to combine full sensor depletion with a low sensor capacitance (≈ 2.5fF), for increased radiation tolerance and low analog power consumption. Efficiency and charge collection time were measured with comparisons before and after irradiation. This paper summarises the measurements and the ATLAS-specific development towards full-reticle size CMOS sensors and modules in this modified technology.",

author = "T. Kugathasan and R. Bates and C. Buttar and I. Berdalovic and B. Blochet and R. Cardella and M. Dalla and \{Egidos Plaja\}, N. and T. Hemperek and \{Van Hoorne\}, \{J. W.\} and D. Maneuski and \{Marin Tobon\}, \{C. A.\} and K. Moustakas and H. Mugnier and L. Musa and H. Pernegger and P. Riedler and C. Riegel and J. Rousset and C. Sbarra and D. Schaefer and Schioppa, \{E. J.\} and A. Sharma and W. Snoeys and \{Solans Sanchez\}, C. and T. Wang and N. Wermes",

note = "Publisher Copyright: {\textcopyright} Copyright owned by the author(s) under the terms of the Creative Commons.; 2017 Topical Workshop on Electronics for Particle Physics, TWEPP 2017 ; Conference date: 11-09-2017 Through 14-09-2017",

year = "2017",

language = "English",

volume = "2017-September",

journal = "Proceedings of Science",

issn = "1824-8039",

publisher = "Sissa Medialab Srl",

}

Kugathasan, T, Bates, R, Buttar, C, Berdalovic, I, Blochet, B, Cardella, R, Dalla, M, Egidos Plaja, N, Hemperek, T, Van Hoorne, JW, Maneuski, D, Marin Tobon, CA, Moustakas, K, Mugnier, H, Musa, L, Pernegger, H, Riedler, P, Riegel, C, Rousset, J, Sbarra, C, Schaefer, D, Schioppa, EJ, Sharma, A, Snoeys, W, Solans Sanchez, C, Wang, T & Wermes, N 2017, 'Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment', Proceedings of Science, vol. 2017-September.

TY - JOUR

T1 - Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment

AU - Kugathasan, T.

AU - Bates, R.

AU - Buttar, C.

AU - Berdalovic, I.

AU - Blochet, B.

AU - Cardella, R.

AU - Dalla, M.

AU - Egidos Plaja, N.

AU - Hemperek, T.

AU - Van Hoorne, J. W.

AU - Maneuski, D.

AU - Marin Tobon, C. A.

AU - Moustakas, K.

AU - Mugnier, H.

AU - Musa, L.

AU - Pernegger, H.

AU - Riedler, P.

AU - Riegel, C.

AU - Rousset, J.

AU - Sbarra, C.

AU - Schaefer, D.

AU - Schioppa, E. J.

AU - Sharma, A.

AU - Snoeys, W.

AU - Solans Sanchez, C.

AU - Wang, T.

AU - Wermes, N.

PY - 2017

Y1 - 2017

N2 - The ATLAS experiment at CERN plans to upgrade its Inner Tracking System for the High-Luminosity LHC in 2026. After the ALPIDE monolithic sensor for the ALICE ITS was successfully implemented in a 180 nm CMOS Imaging Sensor technology, the process was modified to combine full sensor depletion with a low sensor capacitance (≈ 2.5fF), for increased radiation tolerance and low analog power consumption. Efficiency and charge collection time were measured with comparisons before and after irradiation. This paper summarises the measurements and the ATLAS-specific development towards full-reticle size CMOS sensors and modules in this modified technology.

AB - The ATLAS experiment at CERN plans to upgrade its Inner Tracking System for the High-Luminosity LHC in 2026. After the ALPIDE monolithic sensor for the ALICE ITS was successfully implemented in a 180 nm CMOS Imaging Sensor technology, the process was modified to combine full sensor depletion with a low sensor capacitance (≈ 2.5fF), for increased radiation tolerance and low analog power consumption. Efficiency and charge collection time were measured with comparisons before and after irradiation. This paper summarises the measurements and the ATLAS-specific development towards full-reticle size CMOS sensors and modules in this modified technology.

UR - https://www.scopus.com/pages/publications/85050508418

M3 - Article

AN - SCOPUS:85050508418

SN - 1824-8039

VL - 2017-September

JO - Proceedings of Science

JF - Proceedings of Science

T2 - 2017 Topical Workshop on Electronics for Particle Physics, TWEPP 2017

Y2 - 11 September 2017 through 14 September 2017

ER -

Monolithic pixel development in 180 nm CMOS for the outer pixel layers in the ATLAS experiment

Abstract

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