Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk/SOI CMOS process

A. M. Moloney; A. P. Morrison; J. C. Jackson; A. Mathewson; J. Alderman; J. Donnelly; B. O'Neill; A. M. Kelleher; G. Healy; P. J. Murphy

doi:10.1049/el:20030187

Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk/SOI CMOS process

A. M. Moloney
, A. P. Morrison
, J. C. Jackson
, A. Mathewson
, J. Alderman
, J. Donnelly
, B. O'Neill
, A. M. Kelleher
, G. Healy
, P. J. Murphy

School of Engineering and Architecture

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

Monolithically integrated silicon-on-insulator complementary metal oxide semiconductor avalanche photodiode photoreceiver was presented. The photoreceiver consisted of a high gain, low voltage Geiger-mode avalanche photodiode, which was operated below breakdown in avalanche mode, and was monolithically integrated with a transimpedance amplifier. The photodiode exhibited gain in excess of 30 at 13.7 V reverse bias and the integrated photoreceiver was shown to modulate to 10 MHz.

Original language	English
Pages (from-to)	391-392
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	4
DOIs	https://doi.org/10.1049/el:20030187
Publication status	Published - 20 Feb 2003

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10.1049/el:20030187

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title = "Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk/SOI CMOS process",

abstract = "Monolithically integrated silicon-on-insulator complementary metal oxide semiconductor avalanche photodiode photoreceiver was presented. The photoreceiver consisted of a high gain, low voltage Geiger-mode avalanche photodiode, which was operated below breakdown in avalanche mode, and was monolithically integrated with a transimpedance amplifier. The photodiode exhibited gain in excess of 30 at 13.7 V reverse bias and the integrated photoreceiver was shown to modulate to 10 MHz.",

author = "Moloney, \{A. M.\} and Morrison, \{A. P.\} and Jackson, \{J. C.\} and A. Mathewson and J. Alderman and J. Donnelly and B. O'Neill and Kelleher, \{A. M.\} and G. Healy and Murphy, \{P. J.\}",

year = "2003",

month = feb,

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doi = "10.1049/el:20030187",

language = "English",

volume = "39",

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journal = "Electronics Letters",

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T1 - Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk/SOI CMOS process

AU - Moloney, A. M.

AU - Morrison, A. P.

AU - Jackson, J. C.

AU - Mathewson, A.

AU - Alderman, J.

AU - Donnelly, J.

AU - O'Neill, B.

AU - Kelleher, A. M.

AU - Healy, G.

AU - Murphy, P. J.

PY - 2003/2/20

Y1 - 2003/2/20

N2 - Monolithically integrated silicon-on-insulator complementary metal oxide semiconductor avalanche photodiode photoreceiver was presented. The photoreceiver consisted of a high gain, low voltage Geiger-mode avalanche photodiode, which was operated below breakdown in avalanche mode, and was monolithically integrated with a transimpedance amplifier. The photodiode exhibited gain in excess of 30 at 13.7 V reverse bias and the integrated photoreceiver was shown to modulate to 10 MHz.

AB - Monolithically integrated silicon-on-insulator complementary metal oxide semiconductor avalanche photodiode photoreceiver was presented. The photoreceiver consisted of a high gain, low voltage Geiger-mode avalanche photodiode, which was operated below breakdown in avalanche mode, and was monolithically integrated with a transimpedance amplifier. The photodiode exhibited gain in excess of 30 at 13.7 V reverse bias and the integrated photoreceiver was shown to modulate to 10 MHz.

UR - https://www.scopus.com/pages/publications/0037456336

U2 - 10.1049/el:20030187

DO - 10.1049/el:20030187

M3 - Article

AN - SCOPUS:0037456336

SN - 0013-5194

VL - 39

SP - 391

EP - 392

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk/SOI CMOS process

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