TY - CHAP
T1 - Morphological evolution of seeded self-limiting quantum dots on patterned substrates
AU - Dimastrodonato, Valeria
AU - Pelucchi, Emanuele
AU - Vvedensky, Dimitri D.
PY - 2013
Y1 - 2013
N2 - We present experimental data and a comprehensive theoretical model for the self-limiting growth during metalorganic vaporphase epitaxy of Al xGa1-xAs within tetrahedral recesses etched in GaAs(111)B substrates. A self-limiting profile develops during growth, accompanied by Ga segregation, and leads to the formation of quantum dots and vertical quantum wires along the base and central axis of the recesses, respectively. A theoretical model based on reaction-diffusion equations for the precursor kinetics, adatom diffusion and incorporation, on each crystallographic facet composing the template, is formulated: our theory explains, and reproduces with good agreement, all the experimental trends of the self-limiting profile and alloy segregation dependence on material composition and growth temperature. These results represent a promising route toward a reproducible on-demand design of seeded lowdimensional nanostructures grown on any patterned surface.
AB - We present experimental data and a comprehensive theoretical model for the self-limiting growth during metalorganic vaporphase epitaxy of Al xGa1-xAs within tetrahedral recesses etched in GaAs(111)B substrates. A self-limiting profile develops during growth, accompanied by Ga segregation, and leads to the formation of quantum dots and vertical quantum wires along the base and central axis of the recesses, respectively. A theoretical model based on reaction-diffusion equations for the precursor kinetics, adatom diffusion and incorporation, on each crystallographic facet composing the template, is formulated: our theory explains, and reproduces with good agreement, all the experimental trends of the self-limiting profile and alloy segregation dependence on material composition and growth temperature. These results represent a promising route toward a reproducible on-demand design of seeded lowdimensional nanostructures grown on any patterned surface.
KW - crystal growth
KW - metalorganic vaporphase epitaxy
KW - reaction-diffusion equation
KW - surface morphology evolution
UR - https://www.scopus.com/pages/publications/84907301752
U2 - 10.1063/1.4848270
DO - 10.1063/1.4848270
M3 - Chapter
AN - SCOPUS:84907301752
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 31
EP - 32
BT - Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PB - American Institute of Physics Inc.
T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012
Y2 - 29 July 2012 through 3 August 2012
ER -