Abstract
InGaAlP/GaAs red light-emitting diodes (LEDs) with a sub-wavelength moth-eye structure at the output surface were demonstrated. A high-resolution polydimethylsiloxane (h-PDMS) casting material was used for the fabrication of the moth-eye structure from polymer template which was fabricated by hot embossing. The h-PDMS mold was subsequently used to transfer the nanostructure on the output surface of the LED by soft embossing. We succeeded in forming a close packed hexagonal array of hemispheres with 300 nm pitch, and 128 nm depth. With 10 mA driving current, the corresponding efficiency (cd/A) of moth-eye-structured light-emitting diodes was enhanced by 36% compared with those of non-patterned LEDs. The experimental results are in agreement with the results of a theoretical analysis of the effect of the moth-eye structure.
| Original language | English |
|---|---|
| Pages (from-to) | 2446-2450 |
| Number of pages | 5 |
| Journal | Optics Communications |
| Volume | 283 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1 Jun 2010 |
Keywords
- Light-emitting diodes
- Nanostructure fabrication
- Sub-wavelength structure