Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures

Veerendra K. Guduru; A. McCollam; J. C. Maan; U. Zeitler; S. Wenderich; M. K. Kruize; A. Brinkman; M. Huijben; G. Koster; D. H.A. Blank; G. Rijnders; H. Hilgenkamp

doi:10.3938/jkps.63.437

Multi-band conduction behaviour at the interface of LaAlO₃/SrTiO₃ heterostructures

Veerendra K. Guduru
, A. McCollam
, J. C. Maan
, U. Zeitler
, S. Wenderich
, M. K. Kruize
, A. Brinkman
, M. Huijben
, G. Koster
, D. H.A. Blank
, G. Rijnders
, H. Hilgenkamp

Research output: Contribution to journal › Article › peer-review

Abstract

We have measured the Hall resistance and magneto-resistance (MR) of LaAlO₃/SrTiO₃ heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.

Original language	English
Pages (from-to)	437-440
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	63
Issue number	3
DOIs	https://doi.org/10.3938/jkps.63.437
Publication status	Published - Aug 2013
Externally published	Yes

Keywords

High magnetic fields
Negative and positive MR
Non-linear Hall resistance

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10.3938/jkps.63.437

Cite this

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title = "Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures",

abstract = "We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.",

keywords = "High magnetic fields, Negative and positive MR, Non-linear Hall resistance",

author = "Guduru, \{Veerendra K.\} and A. McCollam and Maan, \{J. C.\} and U. Zeitler and S. Wenderich and Kruize, \{M. K.\} and A. Brinkman and M. Huijben and G. Koster and Blank, \{D. H.A.\} and G. Rijnders and H. Hilgenkamp",

year = "2013",

month = aug,

doi = "10.3938/jkps.63.437",

language = "English",

volume = "63",

pages = "437--440",

journal = "Journal of the Korean Physical Society",

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publisher = "Korean Physical Society",

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TY - JOUR

T1 - Multi-band conduction behaviour at the interface of LaAlO3/SrTiO3 heterostructures

AU - Guduru, Veerendra K.

AU - McCollam, A.

AU - Maan, J. C.

AU - Zeitler, U.

AU - Wenderich, S.

AU - Kruize, M. K.

AU - Brinkman, A.

AU - Huijben, M.

AU - Koster, G.

AU - Blank, D. H.A.

AU - Rijnders, G.

AU - Hilgenkamp, H.

PY - 2013/8

Y1 - 2013/8

N2 - We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.

AB - We have measured the Hall resistance and magneto-resistance (MR) of LaAlO3/SrTiO3 heterojunctions at magnetic fields up to 30 T in a temperature range T = 4 K to 70 K. For temperature below 7 K and above 50 K the devices display linear Hall resistance, indicating that one type of charge carriers dominate the transport. For temperatures between 10 K and 40 K, the Hall resistance is strongly non-linear, and is accompanied by a large positive MR, which is governed by the component of magnetic field normal to the interface. This behaviour in the intermediate temperature regime can be related to thermally activated high-mobility carriers.

KW - High magnetic fields

KW - Negative and positive MR

KW - Non-linear Hall resistance

UR - https://www.scopus.com/pages/publications/84882958345

U2 - 10.3938/jkps.63.437

DO - 10.3938/jkps.63.437

M3 - Article

AN - SCOPUS:84882958345

SN - 0374-4884

VL - 63

SP - 437

EP - 440

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Multi-band conduction behaviour at the interface of LaAlO₃/SrTiO₃ heterostructures

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Keywords

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