Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector

Mircea Dragoman; Martino Aldrigo; Daniela Dragoman; Ian M. Povey; Sergiu Iordanescu; Adrian Dinescu; Andrea Di Donato; Mircea Modreanu

doi:10.1016/j.physe.2020.114451

Multifunctionalities of 2D MoS₂ self-switching diode as memristor and photodetector

Mircea Dragoman
, Martino Aldrigo
, Daniela Dragoman
, Ian M. Povey
, Sergiu Iordanescu
, Adrian Dinescu
, Andrea Di Donato
, Mircea Modreanu

Research output: Contribution to journal › Article › peer-review

Abstract

Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS₂ thin film (7 monolayers) grown on a 4-inch Al₂O₃/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS₂ behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d₃₃ piezoelectric coefficient of 3–10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.

Original language	English
Article number	114451
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	126
DOIs	https://doi.org/10.1016/j.physe.2020.114451
Publication status	Published - Feb 2021

Keywords

2D materials
Ferroelectricity
MoS growth at wafer scale
Photodetection
Piezoelectricity

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10.1016/j.physe.2020.114451

https://hdl.handle.net/10468/10591Licence: CC BY-NC-ND

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title = "Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector",

abstract = "Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d33 piezoelectric coefficient of 3–10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.",

keywords = "2D materials, Ferroelectricity, MoS growth at wafer scale, Photodetection, Piezoelectricity",

author = "Mircea Dragoman and Martino Aldrigo and Daniela Dragoman and Povey, \{Ian M.\} and Sergiu Iordanescu and Adrian Dinescu and \{Di Donato\}, Andrea and Mircea Modreanu",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2021",

month = feb,

doi = "10.1016/j.physe.2020.114451",

language = "English",

volume = "126",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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TY - JOUR

T1 - Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector

AU - Dragoman, Mircea

AU - Aldrigo, Martino

AU - Dragoman, Daniela

AU - Povey, Ian M.

AU - Iordanescu, Sergiu

AU - Dinescu, Adrian

AU - Di Donato, Andrea

AU - Modreanu, Mircea

PY - 2021/2

Y1 - 2021/2

N2 - Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d33 piezoelectric coefficient of 3–10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.

AB - Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d33 piezoelectric coefficient of 3–10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.

KW - 2D materials

KW - Ferroelectricity

KW - MoS growth at wafer scale

KW - Photodetection

KW - Piezoelectricity

UR - https://www.scopus.com/pages/publications/85091656466

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DO - 10.1016/j.physe.2020.114451

M3 - Article

AN - SCOPUS:85091656466

SN - 1386-9477

VL - 126

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

M1 - 114451

ER -

Multifunctionalities of 2D MoS₂ self-switching diode as memristor and photodetector

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Keywords

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