TY - GEN
T1 - N-type doped germanium contact resistance extraction and evaluation for advanced devices
AU - Shayesteh, M.
AU - Daunt, C. Ll M.
AU - O'Connell, D.
AU - Djara, V.
AU - White, M.
AU - Long, B.
AU - Duffy, R.
PY - 2011
Y1 - 2011
N2 - The authors extract contact resistivity of NiGe layers on phosphorus-doped and arsenic-doped germanium, using the Transfer Length Method. It is shown experimentally that higher implant dose yields lower contact resistivity. Furthermore phosphorus is a better choice of dopant in terms of contact resistance and sheet resistance at low activation anneal temperatures, such as 500°C. The impact of high contact resistance is evaluated for 22 nm technology NMOS germanium devices and beyond.
AB - The authors extract contact resistivity of NiGe layers on phosphorus-doped and arsenic-doped germanium, using the Transfer Length Method. It is shown experimentally that higher implant dose yields lower contact resistivity. Furthermore phosphorus is a better choice of dopant in terms of contact resistance and sheet resistance at low activation anneal temperatures, such as 500°C. The impact of high contact resistance is evaluated for 22 nm technology NMOS germanium devices and beyond.
UR - https://www.scopus.com/pages/publications/82955201855
U2 - 10.1109/ESSDERC.2011.6044191
DO - 10.1109/ESSDERC.2011.6044191
M3 - Conference proceeding
AN - SCOPUS:82955201855
SN - 9781457707056
T3 - European Solid-State Device Research Conference
SP - 235
EP - 238
BT - ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference
T2 - 41st European Solid-State Device Research Conference, ESSDERC 2011
Y2 - 12 September 2011 through 16 September 2011
ER -