n-type GaSe thin flake for optoelectronic devices

Herein, we present the results obtained with a field effect transistor fabricated using a thin gallium selenide (GaSe) flake as the channel. The fabricated device exhibits n-type conduction behaviour and shows a photo response under illumination by a laser. Notably, the device exhibits memory behaviour maintaining stability for more than 4 hours with repeatable cycles and sensitivity to light stimuli. This confirms its potential as a non-volatile optoelectronic memory, offering an enhanced programming window under laser illumination. The results provide a fundamental understanding of n-type conduction of GaSe thin flake and demonstrate that the investigated material could be suitable for future optoelectronic devices.