Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

J. P. O'Neill; I. M. Ross; A. G. Cullis; T. Wang; P. J. Parbrook

Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

J. P. O'Neill
, I. M. Ross
, A. G. Cullis
, T. Wang
, P. J. Parbrook

University of Sheffield

Research output: Contribution to journal › Article › peer-review

Abstract

In this study the morphology and composition of In _xGa _1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼100A/cm ² cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.

Original language	English
Pages (from-to)	297-300
Number of pages	4
Journal	Design and Nature
Volume	6
Publication status	Published - 2004
Externally published	Yes
Event	Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece Duration: 28 Jun 2004 → 30 Jun 2004

Cite this

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title = "Nano-clustering anomalies in InGaN/GaN multiple quantum well structures",

abstract = "In this study the morphology and composition of In xGa 1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼100A/cm 2 cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.",

author = "O'Neill, \{J. P.\} and Ross, \{I. M.\} and Cullis, \{A. G.\} and T. Wang and Parbrook, \{P. J.\}",

year = "2004",

language = "English",

volume = "6",

pages = "297--300",

journal = "Design and Nature",

issn = "1478-0585",

publisher = "WITPress",

note = "Design and Nature II: Comparing Design in Nature with Science and Engineering ; Conference date: 28-06-2004 Through 30-06-2004",

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TY - JOUR

T1 - Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

AU - O'Neill, J. P.

AU - Ross, I. M.

AU - Cullis, A. G.

AU - Wang, T.

AU - Parbrook, P. J.

PY - 2004

Y1 - 2004

N2 - In this study the morphology and composition of In xGa 1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼100A/cm 2 cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.

AB - In this study the morphology and composition of In xGa 1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ∼100A/cm 2 cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.

UR - https://www.scopus.com/pages/publications/7744235246

M3 - Article

AN - SCOPUS:7744235246

SN - 1478-0585

VL - 6

SP - 297

EP - 300

JO - Design and Nature

JF - Design and Nature

T2 - Design and Nature II: Comparing Design in Nature with Science and Engineering

Y2 - 28 June 2004 through 30 June 2004

ER -

Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

Abstract

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