Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

J. P. O’Neill; I. M. Ross; A. G. Cullis; T. Wang; P. J. Parbrook

doi:10.1201/9781351074636

Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

J. P. O’Neill
, I. M. Ross
, A. G. Cullis
, T. Wang
, P. J. Parbrook

University of Sheffield

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

In this study the morphology and composition of In_xGa_1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ~100A/cm² cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Publisher	CRC Press
Pages	297-300
Number of pages	4
ISBN (Electronic)	9781351083089
ISBN (Print)	0750309792, 9781315895536
DOIs	https://doi.org/10.1201/9781351074636
Publication status	Published - 1 Jan 2018
Externally published	Yes

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10.1201/9781351074636

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title = "Nano-clustering anomalies in InGaN/GaN multiple quantum well structures",

abstract = "In this study the morphology and composition of InxGa1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of \textasciitilde{}100A/cm2 cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.",

author = "O{\textquoteright}Neill, \{J. P.\} and Ross, \{I. M.\} and Cullis, \{A. G.\} and T. Wang and Parbrook, \{P. J.\}",

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T1 - Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

AU - O’Neill, J. P.

AU - Ross, I. M.

AU - Cullis, A. G.

AU - Wang, T.

AU - Parbrook, P. J.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - In this study the morphology and composition of InxGa1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ~100A/cm2 cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.

AB - In this study the morphology and composition of InxGa1-xN/GaN multiple quantum well structures and their sensitivity to electron beam damage is examined. Characterization was performed using high-resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. Exposure to relatively low incident beam illumination, corresponding to current densities at the specimen of ~100A/cm2 cumulated in a significant redistribution of indium within the multiple quantum wells. The findings highlight the need for caution when interpreting analytical data obtained from InGaN/GaN multiple quantum wells studied in the transmission electron microscope.

UR - https://www.scopus.com/pages/publications/85053298442

U2 - 10.1201/9781351074636

DO - 10.1201/9781351074636

M3 - Chapter

AN - SCOPUS:85053298442

SN - 0750309792

SN - 9781315895536

SP - 297

EP - 300

BT - Microscopy of Semiconducting Materials 2003

PB - CRC Press

ER -

Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

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