Nanoindentation of multilayer PZT/Pt/SiO2 thin film systems on silicon wafers for MEMS applications

C. Chima-Okereke; M. J. Reece; A. J. Bushby; R. W. Whatmore; Q. Zhang

Nanoindentation of multilayer PZT/Pt/SiO₂ thin film systems on silicon wafers for MEMS applications

C. Chima-Okereke
, M. J. Reece
, A. J. Bushby
, R. W. Whatmore
, Q. Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

Nanoindentation is a promising tool for obtaining the elastic properties of thin films. However, no means exists to predict or extrapolate the elastic modulus of the top layer in multilayer systems from experimental data. The mechanical properties of PZT multilayer systems have become increasingly important in applications for MEMS devices. The indentation modulus vs. a/t behaviour of PZT on Pt/SiO₂/Si wafer substrate was investigated and compared with a new analytical solution for Herztian indentation of multilayers. Five different PZT film thicknesses were indented (70, 140, 400, 700, 1500 nm), using a 10 μm radius indenter. Good agreement was found between analytical equations and experimental data. However the behaviour of the multilayer system was complex. This makes the deconvolution of film properties difficult for thicknesses less than about 1000 nm.

Original language	English
Article number	R12.3
Pages (from-to)	351-356
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	841
Publication status	Published - 2005
Externally published	Yes
Event	2004 MRS Fall Meeting - Boston, MA, United States Duration: 29 Nov 2004 → 2 Dec 2004

Cite this

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title = "Nanoindentation of multilayer PZT/Pt/SiO2 thin film systems on silicon wafers for MEMS applications",

abstract = "Nanoindentation is a promising tool for obtaining the elastic properties of thin films. However, no means exists to predict or extrapolate the elastic modulus of the top layer in multilayer systems from experimental data. The mechanical properties of PZT multilayer systems have become increasingly important in applications for MEMS devices. The indentation modulus vs. a/t behaviour of PZT on Pt/SiO2/Si wafer substrate was investigated and compared with a new analytical solution for Herztian indentation of multilayers. Five different PZT film thicknesses were indented (70, 140, 400, 700, 1500 nm), using a 10 μm radius indenter. Good agreement was found between analytical equations and experimental data. However the behaviour of the multilayer system was complex. This makes the deconvolution of film properties difficult for thicknesses less than about 1000 nm.",

author = "C. Chima-Okereke and Reece, \{M. J.\} and Bushby, \{A. J.\} and Whatmore, \{R. W.\} and Q. Zhang",

year = "2005",

language = "English",

volume = "841",

pages = "351--356",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Springer Nature",

note = "2004 MRS Fall Meeting ; Conference date: 29-11-2004 Through 02-12-2004",

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TY - JOUR

T1 - Nanoindentation of multilayer PZT/Pt/SiO2 thin film systems on silicon wafers for MEMS applications

AU - Chima-Okereke, C.

AU - Reece, M. J.

AU - Bushby, A. J.

AU - Whatmore, R. W.

AU - Zhang, Q.

PY - 2005

Y1 - 2005

N2 - Nanoindentation is a promising tool for obtaining the elastic properties of thin films. However, no means exists to predict or extrapolate the elastic modulus of the top layer in multilayer systems from experimental data. The mechanical properties of PZT multilayer systems have become increasingly important in applications for MEMS devices. The indentation modulus vs. a/t behaviour of PZT on Pt/SiO2/Si wafer substrate was investigated and compared with a new analytical solution for Herztian indentation of multilayers. Five different PZT film thicknesses were indented (70, 140, 400, 700, 1500 nm), using a 10 μm radius indenter. Good agreement was found between analytical equations and experimental data. However the behaviour of the multilayer system was complex. This makes the deconvolution of film properties difficult for thicknesses less than about 1000 nm.

AB - Nanoindentation is a promising tool for obtaining the elastic properties of thin films. However, no means exists to predict or extrapolate the elastic modulus of the top layer in multilayer systems from experimental data. The mechanical properties of PZT multilayer systems have become increasingly important in applications for MEMS devices. The indentation modulus vs. a/t behaviour of PZT on Pt/SiO2/Si wafer substrate was investigated and compared with a new analytical solution for Herztian indentation of multilayers. Five different PZT film thicknesses were indented (70, 140, 400, 700, 1500 nm), using a 10 μm radius indenter. Good agreement was found between analytical equations and experimental data. However the behaviour of the multilayer system was complex. This makes the deconvolution of film properties difficult for thicknesses less than about 1000 nm.

UR - https://www.scopus.com/pages/publications/23844553806

M3 - Article

AN - SCOPUS:23844553806

SN - 0272-9172

VL - 841

SP - 351

EP - 356

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - R12.3

T2 - 2004 MRS Fall Meeting

Y2 - 29 November 2004 through 2 December 2004

ER -

Nanoindentation of multilayer PZT/Pt/SiO₂ thin film systems on silicon wafers for MEMS applications

Abstract

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