Nanowire to single-electron transistor transition in trigate SOI MOSFETs

Nima Dehdashti Akhavan; Aryan Afzalian; Chi Woo Lee; Ran Yan; Isabelle Ferain; Pedram Razavi; Ran Yu; Giorgos Fagas; Jean Pierre Colinge

doi:10.1109/TED.2010.2084390

Nanowire to single-electron transistor transition in trigate SOI MOSFETs

Nima Dehdashti Akhavan
, Aryan Afzalian
, Chi Woo Lee
, Ran Yan
, Isabelle Ferain
, Pedram Razavi
, Ran Yu
, Giorgos Fagas
, Jean Pierre Colinge

Université catholique de Louvain

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the effect of symmetrical geometrical constrictions on the electrical characteristics of ultrathin silicon-on-insulator nanowires with a trigate structure using a 3-D numerical quantum simulator. Introducing barriers at the source and drain junctions profoundly alter the device physics and a transition from 1-D to 0-D quantum behavior is observed. The constrictions create resonance levels in the channel region of nanowire due to confinement in the three directions of space, which, in turn, causes oscillation of the I _DV_GS characteristic. Based on the observed characteristics, we derive a set of parameters that draws the line between 1-D and 0-D quantum behavior of silicon nanowire transistors.

Original language	English
Article number	5610985
Pages (from-to)	26-32
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	1
DOIs	https://doi.org/10.1109/TED.2010.2084390
Publication status	Published - Jan 2011

Keywords

3-D device modeling
low temperature
low-dimensional structures
quantum transport
silicon nanowire transistor
tunnel-barrier field-effect transistor (FET)

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10.1109/TED.2010.2084390

Cite this

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title = "Nanowire to single-electron transistor transition in trigate SOI MOSFETs",

abstract = "We investigate the effect of symmetrical geometrical constrictions on the electrical characteristics of ultrathin silicon-on-insulator nanowires with a trigate structure using a 3-D numerical quantum simulator. Introducing barriers at the source and drain junctions profoundly alter the device physics and a transition from 1-D to 0-D quantum behavior is observed. The constrictions create resonance levels in the channel region of nanowire due to confinement in the three directions of space, which, in turn, causes oscillation of the I DVGS characteristic. Based on the observed characteristics, we derive a set of parameters that draws the line between 1-D and 0-D quantum behavior of silicon nanowire transistors.",

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doi = "10.1109/TED.2010.2084390",

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AU - Akhavan, Nima Dehdashti

AU - Afzalian, Aryan

AU - Lee, Chi Woo

AU - Yan, Ran

AU - Ferain, Isabelle

AU - Razavi, Pedram

AU - Yu, Ran

AU - Fagas, Giorgos

AU - Colinge, Jean Pierre

PY - 2011/1

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AB - We investigate the effect of symmetrical geometrical constrictions on the electrical characteristics of ultrathin silicon-on-insulator nanowires with a trigate structure using a 3-D numerical quantum simulator. Introducing barriers at the source and drain junctions profoundly alter the device physics and a transition from 1-D to 0-D quantum behavior is observed. The constrictions create resonance levels in the channel region of nanowire due to confinement in the three directions of space, which, in turn, causes oscillation of the I DVGS characteristic. Based on the observed characteristics, we derive a set of parameters that draws the line between 1-D and 0-D quantum behavior of silicon nanowire transistors.

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KW - low-dimensional structures

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Nanowire to single-electron transistor transition in trigate SOI MOSFETs

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Keywords

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